RA18H1213G Stage Amp Datasheet

RA18H1213G Datasheet, PDF, Equivalent


Part Number

RA18H1213G

Description

3 Stage Amp

Manufacture

Mitsubishi Electric

Total Page 9 Pages
Datasheet
Download RA18H1213G Datasheet


RA18H1213G
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA18H1213G
1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA18H1213G is a 18-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 1.24- to
1.30-GHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>18W, ηT>20% @ VDD=12.5V, VGG=5V, Pin=200mW
• Broadband Frequency Range: 1.24-1.30GHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Modulewww.DataSheet4U.com Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
1
3
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2S
ORDERING INFORMATION:
ORDER NUMBER
RA18H1213G-01
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA18H1213G
MITSUBISHI ELECTRIC
1/9
5 April 2004

RA18H1213G
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<5V, ZG=ZL=50
VGG Gate Voltage
VDD<12.5V, Pin=0mW, ZG=ZL=50
Pin Input Power
Pout Output Power
f=1.24-1.30GHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
f=1.24-1.30GHz, ZG=ZL=50
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
MITSUBISHI RF POWER MODULE
RA18H1213G
RATING
17
6
300
30
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f Frequency Range
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
IGG Gate Current
Gp Linear power gain
VDD=12.5V, VGG=5V, Pin=200mW
VDD=12.5V, VGG=5V, Pin=10dBm
1.24 1.30 GHz
18 W
20 %
-30
3:1 —
1 mA
23 dB
IMD3
IMD5
3rd Inter Modulation Distortion
5th Inter Modulation Distortion
Stability
Load VSWR Tolerance
VDD=12.5V, VGG=5V
Delta f=f1-f2=10KHz
Pout=14W P.E.P. (Pin control)
VDD=10.0-15.5V, Pin=0-25dBm,
Pout=1 to 18W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=200mW,
Pout=18W (VGG control), Load VSWR=8:1
-20 dBc
-25 dBc
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA18H1213G
MITSUBISHI ELECTRIC
2/9
5 April 2004


Features MITSUBISHI RF MOSFET MODULE ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RA18H1213G BLOCK DIAGRAM 1.2 4-1.30GHz 18W 12.5V, 3 Stage Amp. For M OBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Modul e for 12.5-volt mobile radios that oper ate in the 1.24- to 1.30-GHz range. The battery can be connected directly to t he drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input s ignal attenuates up to 60 dB. The outpu t power and drain current increase as t he gate voltage increases. With a gate voltage around 4V (minimum), output pow er and drain current increases substant ially. The nominal output power becomes available at 4.5V (typical) and 5V (ma ximum). At VGG=5V, the typical gate cur rent is 1 mA. This module is designed f or non-linear FM modulation, but may al so be used for linear modulation by set ting the drain quiescent current with the gate voltage and cont.
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