RA30H1721M RoHS Compliance Datasheet

RA30H1721M Datasheet, PDF, Equivalent


Part Number

RA30H1721M

Description

RoHS Compliance

Manufacture

Mitsubishi Electric

Total Page 8 Pages
Datasheet
Download RA30H1721M Datasheet


RA30H1721M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA30H1721M
RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA30H1721M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 175- to
215-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4V (typical) and 5V (maximum). At VGG=5V,
the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 175-215MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Modulewww.DataSheet4U.com Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA30H1721M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA30H1721M-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H1721M
MITSUBISHI ELECTRIC
1/8
24 Jan 2006

RA30H1721M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA30H1721M
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD Drain Voltage
VGG<5V, ZG=ZL=50
VGG Gate Voltage
VDD<12.5V, Pin=50mW, ZG=ZL=50
Pin Input Power
Pout Output Power
f=175-215MHz, VGG<5V
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
17
6
100
45
-30 to +110
-40 to +110
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f Frequency Range
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
VDD=12.5V,
VGG=5V,
Pin=50mW
IGG Gate Current
— Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout<30W (VGG control), Load VSWR=3:1
Load VSWR Tolerance
VDD=15.2V, Pin=50mW, Pout=30W (VGG control),
Load VSWR<20:1
175 215
30
40
-25
3:1
1
No parasitic oscillation
MHz
W
%
dBc
mA
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA30H1721M
MITSUBISHI ELECTRIC
2/8
24 Jan 2006


Features MITSUBISHI RF MOSFET MODULE ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RA30H1721M BLOCK DIAGRAM 2 3 RoHS Compliance , 175-215MHz 30W 12.5V , 2 Stage Amp. For MOBILE RADIO DESCRI PTION The RA30H1721M is a 30-watt RF MO SFET Amplifier Module for 12.5-volt mob ile radios that operate in the 175- to 215-MHz range. The battery can be conne cted directly to the drain of the enhan cement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a smal l leakage current flows into the drain and the RF input signal attenuates up t o 60 dB. The output power and drain cur rent increase as the gate voltage incre ases. With a gate voltage around 4V (mi nimum), output power and drain current increases substantially. The nominal ou tput power becomes available at 4V (typ ical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This modu le is designed for non-linear FM modula tion, but may also be used for linear m odulation by setting the drain quiescent current with the gate .
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