STT1NF100 N-CHANNEL MOSFET Datasheet

STT1NF100 Datasheet, PDF, Equivalent


Part Number

STT1NF100

Description

N-CHANNEL MOSFET

Manufacture

STMicroelectronics

Total Page 6 Pages
Datasheet
Download STT1NF100 Datasheet


STT1NF100
STT1NF100
N-CHANNEL 100V - 0.7- 1A SOT23-6L
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
STT1NF100
100V
<0.8
s TYPICAL RDS(on) = 0.7
s EXCEPTIONAL dv/dt CAPABILITY
s VERY LOW Qg
ID
1A
SOT23-6L
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
INTERNAL SCHEMATIC DIAGRAM
www.DataSheet4U.com
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s SYNCHRONOUS RECTIFICATION
MARKING
s STQ0
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
September 2002
Value
100
100
± 20
1
0.6
4
1.6
0.013
20
Unit
V
V
V
A
A
A
W
W/°C
V/ns
– 55 to 150
°C
(1) ISD 1A, di/dt 350A/µs, VDD V(BR)DSS, Tj TJMAX.
1/6

STT1NF100
STT1NF100
THERMAL DATA
Rthj-amb(*) Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
(*) When mounted on FR-4 board of 1inch² pad, 0.5oz Cu
78
260
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
100
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 0.5 A
Min.
2
Typ.
0.7
Max.
0.8
Unit
V
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS =15V , ID =1A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
1
105
20
9
Max.
Unit
S
pF
pF
pF
2/6


Features STT1NF100 N-CHANNEL 100V - 0.7Ω - 1A S OT23-6L STripFET™ II POWER MOSFET PRE LIMINARY DATA TYPE STT1NF100 s s s VDS S 100V RDS(on) <0.8Ω ID 1A TYPICAL RDS(on) = 0.7Ω EXCEPTIONAL dv/dt CAP ABILITY VERY LOW Qg SOT23-6L DESCRIPTI ON This Power MOSFET is the latest deve lopment of STMicroelectronics unique Single Feature Size™” stripbased p rocess. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characte ristics and less critical alignment ste ps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC D IAGRAM www.DataSheet4U.com APPLICATIO NS s DC-DC & DC-AC CONVERTERS s DC MOTO R CONTROL (DISK DRIVES, etc.) s SYNCHRO NOUS RECTIFICATION s MARKING STQ0 AB SOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) G ate- source Voltage Drain Current (cont inuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pu.
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