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2SC5631

Hitachi Semiconductor

Silicon NPN Transistor

2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier ADE-208-981A (Z) 2nd. Edition Mar. 2001 Features • High gai...


Hitachi Semiconductor

2SC5631

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2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier ADE-208-981A (Z) 2nd. Edition Mar. 2001 Features High gain bandwidth product fT = 11 GHz typ. High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz Outline UPAK www.DataSheet4U.com 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector Note: Marking is “JR”. 2SC5631 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 80 800* 150 –55 to +150 Unit V V V mA mW °C °C * When using alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO hFE Cob fT PG NF Min 15 — — — 80 — 8 7 — Typ — — — — 120 1.6 11 10 1.2 Max — 1 1 10 160 2.2 — — 1.9 Unit V µA mA µA V pF GHz dB dB Test Conditions I C = 10 µA , IE = 0 VCB = 12 V , IE = 0 VCE = 6 V , RBE = ∞ VEB = 1.5 V , IC = 0 VCE = 5 V , IC = 50 mA VCB = 5 V , IE = 0 f = 1 MHz VCE = 5 V , IC = 50 mA f = 1 GHz VCE = 5 V , IC = 50 mA f = 900 MHz VCE = 5 V , IC = 5 mA f = 900 MHz 2 2SC5631 Main Characteristics Collector Power Dissipation Curve Pc (mW) 1600 hFE 200 DC ...




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