6510A Datasheet PDF | Microsemi Corporation





(PDF) 6510A Datasheet PDF

Part Number 6510A
Description Isolated Diode Array
Manufacture Microsemi Corporation
Total Page 2 Pages
PDF Download Download 6510A Datasheet PDF

Features: 6510A Isolated Diode Array with HiRel MQ , MX, MV, and SP Screening Options SCO TTSDALE DIVISION DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricate d by a planar process and mounted in a 16-PIN ceramic flat pack for use as ste ering diodes protecting up to eight I/O ports from ESD, EFT, or surge by direc ting them either to the positive side o f the power supply line or to ground (s ee figure 1). An external TVS diode may be added between the positive supply l ine and ground to prevent over-voltage on the supply rail. They may also be us ed in fast switching coredriver applica tions. This includes computers and peri pheral equipment such as magnetic cores , thin-film memories, plated-wire memor ies, etc., as well as decoding or encod ing applications. These arrays offer ma ny advantages of integrated circuits su ch as high-density packaging and improv ed reliability. This is a result of few er pick and place operations, smaller footprint, smaller weight.

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6510A datasheet
SCOTTSDALE DIVISION
6510A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing
them either to the positive side of the power supply line or to ground (see figure 1). An
external TVS diode may be added between the positive supply line and ground to
prevent over-voltage on the supply rail. They may also be used in fast switching core-
driver applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding
or encoding applications. These arrays offer many advantages of integrated circuits
such as high-density packaging and improved reliability. This is a result of fewer pick
and place operations, smaller footprint, smaller weight, and elimination of various
discrete packages that may not be as user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
16-PIN Ceramic
Flat Pack
FEATURES
www.DataSheet4U.com
Hermetic Ceramic Package
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 75 V at 5 μA
Low Leakage IR< 100nA at 40 V
Low Capacitance Ct < 4.0 pF
Switching Speeds less than 10 ns
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or SP prefixes
respectively to part numbers. For example, designate
MX6510A for a JANTX screen.
MAXIMUM RATINGS
Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25oC
500 mW Power Dissipation per Package @ 25oC (Note 4)
Operating Junction Temperature range –65 to +150oC
Storage Temperature range of –65 to +150oC
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max.; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.0 mW/oC above +25oC
APPLICATIONS / BENEFITS
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (See Circuit in Figure
1)
61000-4-2 (ESD): Air 15 kV, contact – 8 kV
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A, 8/20 µs
MECHANICAL AND PACKAGING
16-PIN Ceramic Flat Pack
Weight 0.5 grams (approximate)
Marking: Logo, part number, date code and dot
identifying pin #1
Carrier Tubes; 19 pcs (standard)
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
PART
NUMBER
6510A
MAXIMUM
FORWARD
VOLTAGE
VF1
IF = 100 mA
(Note 1)
V
1
MAXIMUM
REVERSE
CURRENT
IR1
VR = 40 V
µA
0.1
MAXIMUM
REVERSE
CURRENT
IR2
VR = 20 V
nA
25
MAXIMUM
CAPACITANCE
(PIN TO PIN)
Ct
VR = 0 V;
F = 1 MHz
pF
4.0
MAXIMUM
FORWARD
RECOVERY
TIME
tfr
IF = 100 mA
ns
15
MAXIMUM
REVERSE
RECOVERY TIME
trr @
IF = IR = 10 mA
irr = 1 mA
RL = 100 ohms
ns
10
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
MAXIMUM
FORWARD
VOLTAGE
MATCH
VF5
IF= 10 mA
mV
5
Copyright © 2007
3-27-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

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