CLT133 Silicon Phototransistors Datasheet

CLT133 Datasheet, PDF, Equivalent


Part Number

CLT133

Description

(CLT130 - CLT133) NPN Silicon Phototransistors

Manufacture

ETC

Total Page 1 Pages
Datasheet
Download CLT133 Datasheet


CLT133
CLT130,CLT131,CLT132,CLT133
NPN Silicon Phototransistors
CLT130, CLT131, CLT132 and CLT133 are
exact replacements for obsolete part numbers
CLT2130, CLT2140, CLT2150 and CLT2160.
0.190 (4.83)
0.176 (4.47)
0.210 (5.33)
0.190 (4.83)
0.500 (12.7) min
® Clairex
Technologies, Inc.
July, 2001
0.215 (5.46)
0.205 (5.21)
0.158 (4.01)
0.136 (3.45)
0.060 (1.52)
max
0.025 (0.64)
max
0.019 (0.48)
0.016 (0.41)
COLLECTOR
BASE
EMITTER
0.100 (2.54) dia
0.147 (3.73)
0.137 (3.48)
ALL DIMENSIONS ARE IN INCHES (CMaILsLeIM1E7TERS)
features
absolute maximum ratings (TA = 25°C unless otherwise stated)
high sensitivity
storage temperature…………………………………………………………………..-65°C to +150°C
18° acceptance angle
operating temperature………………………………………………………………..-65°C to +125°C
custom aspheric lensed TO-18 package lead soldering temperature(1)…………………………………………………………………….260°C
transistor base is bonded
usable throughout visible and near
infrared spectrum
collector-emitter voltage…………………………………………………………………………….30V
continuous collector current……………………………………………………….……………..50mA
maximum continuous power dissipation……………………………………………………250mW(2)
description
notes:
The CLT130-CLT133 series are NPN
1. 0.06” (1.5mm) from the header for 5 seconds maximum
silicon phototransistors mounted in TO-18 2. Derate linearly 2.0mW/°C from 25°C free air temperature to TA = +125°C.
packages which feature custom double
www.DataSheet4U.com convex glass-to-metal sealed aspheric
lenses. Narrow acceptance angle
enables excellent on-axis coupling. These
devices are mechanically and spectrally
matched to the CLE130-CLE133 series
IREDs. For additional information, call
Clairex.
electrical characteristics (TA = 25°C unless otherwise noted)
symbol parameter
min typ max units test conditions
Light current(1)
IL
CLT130
CLT131
CLT132
CLT133
0.60
1.2
2.4
4.0
ICEO Collector dark current
-
V(BR)CEO Collector-emitter breakdown
30
tr, tf Output rise and fall time
-
θHP Total angle at half sensitivity points -
note: 1. Radiation source for all light current testing is a 940nm IRED.
-
-
-
-
-
-
3
18
-
-
-
-
mA
mA
mA
mA
VCE=5V,
VCE=5V,
VCE=5V,
VCE=5V,
EEEEeeee====1111....5555mmmmWWWW////ccccmmmm2222
25 nA VCE=10V, Ee=0
- V IC=100µA
- µs VCC=5V, RL=100.
- deg.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 12/01/04
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com


Features CLT130,CLT131,CLT132,CLT133 NPN Silicon Phototransistors CLT130, CLT131, CLT132 and CLT133 are exact replacements for obsolete part numbers CLT2130, CLT2140, CLT2150 and CLT2160. 0.210 (5.33) 0.19 0 (4.83) 0.500 (12.7) min 0.190 (4.83) 0.176 (4.47) ® Clairex 0.215 (5.46) 0.205 (5.21)  Technologies, Inc. J uly, 2001 COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0 .060 (1.52) max 0.025 (0.64) max 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) ALL DIMENSIONS ARE IN INCHES (M ILLIMETERS) Case 17 features • • • • • high sensitivity 18° accep tance angle custom aspheric lensed TO-1 8 package transistor base is bonded usa ble throughout visible and near infrare d spectrum absolute maximum ratings (T A = 25°C unless otherwise stated) sto rage temperature………………… ……………………………… …………..-65°C to +150°C operat ing temperature…………………… …………………………………………..-65°C to +125°C (1) lead soldering temperature …………………………………………………………………….260°C collector-emitter voltage…………………………………………………………….
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