IRLU3715PBF SMPS MOSFET Datasheet

IRLU3715PBF Datasheet, PDF, Equivalent


Part Number

IRLU3715PBF

Description

SMPS MOSFET

Manufacture

International Rectifier

Total Page 10 Pages
Datasheet
Download IRLU3715PBF Datasheet


IRLU3715PBF
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PD - 95555A
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
VDSS
20V
IRLR3715PbF
IRLU3715PbF
HEXFET® Power MOSFET
RDS(on) max
14m
ID
54A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation…
Linear Derating Factor
Junction and Storage Temperature Range
D-Pak
IRLR3715
I-Pak
IRLU3715
Max.
20
± 20
54„
38„
210
71
3.8
0.48
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)…
Typ.
–––
–––
–––
Max.
2.1
110
50
Units
°C/W
Notes  through … are on page 10
www.irf.com
1
12/6/04

IRLU3715PBF
IRLR/U3715PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
20
–––
–––
–––
1.0
–––
–––
–––
–––
––– –––
0.022 –––
11 14
15 20
––– 3.0
––– 20
––– 100
––– 200
––– -200
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
m
VGS = 10V, ID = 26A ƒ
VGS = 4.5V, ID = 21A ƒ
V VDS = VGS, ID = 250µA
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA
VGS = 16V
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
26 ––– ––– S VDS = 10V, ID = 21A
Qg Total Gate Charge
––– 11 17
ID = 21A
Qgs Gate-to-Source Charge
––– 3.8 ––– nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge
––– 4.4 –––
VGS = 4.5V
Qoss
Output Gate Charge
––– 11 17
VGS = 0V, VDS = 10V
td(on)
Turn-On Delay Time
––– 6.4 –––
VDD = 10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 73 ––– ns ID = 21A
––– 12 –––
RG = 1.8
tf Fall Time
––– 5.1 –––
VGS = 4.5V ƒ
Ciss Input Capacitance
––– 1060 –––
VGS = 0V
Coss Output Capacitance
––– 700 –––
VDS = 10V
Crss Reverse Transfer Capacitance
––– 120 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
–––
–––
Max.
110
21
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
––– 54„
––– 210
A
0.9 1.3
0.8 –––
37 56
28 42
38 57
30 45
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 21A, VGS = 0V ƒ
TJ = 125°C, IS = 21A, VGS = 0V ƒ
TJ = 25°C, IF = 21A, VR=20V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 21A, VR=20V
di/dt = 100A/µs ƒ
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Features PD - 95555A SMPS MOSFET IRLR3715PbF IR LU3715PbF HEXFET® Power MOSFET Applic ations l High Frequency Isolated DC-DC Converters with Synchronous Rectificati on for Telecom and Industrial Use l Hig h Frequency Buck Converters for Compute r Processor Power l Lead-Free Benefits Ultra-Low Gate Impedance l Very Low RDS (on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current l www.Dat aSheet4U.com VDSS 20V RDS(on) max 14m Ω ID 54A D-Pak IRLR3715 I-Pak IRLU 3715 Absolute Maximum Ratings Symbol V DS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG Parameter Drain-Source Voltage G ate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Cur rent, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation… Linear Derating Factor J unction and Storage Temperature Range Max. 20 ± 20 54„ 38„ 210 71 3.8 0.48 -55 to + 175 Units V V A W W W/°C ° C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-A.
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