IRLU8113PBF Power MOSFET Datasheet

IRLU8113PBF Datasheet, PDF, Equivalent


Part Number

IRLU8113PBF

Description

HEXFET Power MOSFET

Manufacture

International Rectifier

Total Page 11 Pages
Datasheet
Download IRLU8113PBF Datasheet


IRLU8113PBF
www.DataSheet4U.com
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes  through … are on page 11
www.irf.com
PD - 95779A
IRLR8113PbF
IRLU8113PbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 6.0m
22nC
D-Pak
IRLR8113
I-Pak
IRLU8113
Max.
30
± 20
94f
67f
380
89
44
0.59
-55 to + 175
300 (1.6mm from case)
x x10 lbf in (1.1 N m)
Typ.
–––
–––
–––
Max.
1.69
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/7/04

IRLU8113PBF
IRLR/U8113PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Min.
30
–––
–––
–––
1.35
–––
–––
Typ. Max. Units
Conditions
––– ––– V VGS = 0V, ID = 250µA
21 ––– mV/°C Reference to 25°C, ID = 1mA
e4.8 6.0 mVGS = 10V, ID = 15A
5.8 7.4
eVGS = 4.5V, ID = 12A
––– 2.25 V VDS = VGS, ID = 250µA
-5.6 ––– mV/°C
––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 175°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
74 ––– –––
––– 22 32
S VDS = 15V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 6.1 –––
VDS = 15V
––– 1.7 ––– nC VGS = 4.5V
––– 6.8 –––
ID = 12A
––– 7.4 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 8.5 –––
Qoss
td(on)
Output Charge
Turn-On Delay Time
––– 14 ––– nC VDS = 16V, VGS = 0V
––– 9.2 –––
eVDD = 15V, VGS = 4.5V
tr Rise Time
––– 3.8 –––
ID = 12A
td(off)
Turn-Off Delay Time
––– 15 ––– ns Clamped Inductive Load
tf Fall Time
––– 10 –––
Ciss Input Capacitance
––– 2920 –––
VGS = 0V
Coss Output Capacitance
––– 610 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 260 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
145
13
8.9
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
fMin. Typ. Max. Units
Conditions
––– ––– 94
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
2
––– ––– 380
A showing the
integral reverse
G
––– ––– 1.0
p-n junction diode.
S
eV TJ = 25°C, IS = 12A, VGS = 0V
e––– 33 49 ns TJ = 25°C, IF = 12A, VDD = 15V
––– 30 45 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com


Features PD - 95779A IRLR8113PbF IRLU8113PbF App lications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC C onverters with Synchronous Rectificatio n for Telecom and Industrial Use l Lead -Free Benefits l Very Low RDS(on) at 4. 5V VGS l Ultra-Low Gate Impedance l Ful ly Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS RD S(on) max 30V 6.0m: Qg 22nC D-Pak IRL R8113 I-Pak IRLU8113 Absolute Maximum Ratings www.DataSheet4U.com Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100 C IDM PD @TC = 25°C PD @TC = 100°C T J TSTG Drain-to-Source Voltage Gate-to- Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Max. 30 ± 20 94 67 Units V ™ f f A W 380 89 44 0.59 -55 to + 175 W/°C °C Max imum Power Dissipation Maximum Power Di ssipation Linear Derating Factor Operat ing Junction and Storage Temperature Ra nge Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 sc.
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