RA45H4452M RoHS Compliance Datasheet

RA45H4452M Datasheet, PDF, Equivalent


Part Number

RA45H4452M

Description

RoHS Compliance

Manufacture

Mitsubishi Electric

Total Page 8 Pages
Datasheet
Download RA45H4452M Datasheet


RA45H4452M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA45H4452M
RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H4452M is a 45-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Modulewww.DataSheet4U.com Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
1
3
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA45H4452M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA45H4452M-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA45H4452M
MITSUBISHI ELECTRIC
1/8
24 Jan 2006

RA45H4452M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA45H4452M
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD Drain Voltage
VGG<5V
VGG Gate Voltage
VDD<12.5V, Pin=0mW
Pin Input Power
Pout Output Power
f=440-520MHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
17
6
100
55
-30 to +110
-40 to +110
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f Frequency Range
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
VDD=12.5V
VGG=5V
Pin=50mW
IGG Gate Current
— Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout<55W (VGG control), Load VSWR=3:1
Load VSWR Tolerance
VDD=15.2V, Pin=50mW, Pout=45W (VGG control),
Load VSWR=20:1
440 520
45
35
-25
3:1
1
No parasitic oscillation
MHz
W
%
dBc
mA
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA45H4452M
MITSUBISHI ELECTRIC
2/8
24 Jan 2006


Features MITSUBISHI RF MOSFET MODULE ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RA45H4452M BLOCK DIAGRAM RoH S Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTIO N The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520- MHz range. The battery can be connected directly to the drain of the enhanceme nt-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small le akage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases . With a gate voltage around 4V (minimu m), output power and drain current incr eases substantially. The nominal output power becomes available at 4.5V (typic al) and 5V (maximum). At VGG=5V, the ty pical gate current is 1 mA. This module is designed for non-linear FM modulati on, but may also be used for linear mod ulation by setting the drain quiescent current with the gate vo.
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