Compliance. RA45H7687M1 Datasheet

RA45H7687M1 Datasheet. RoHS Compliance.


Part Number

RA45H7687M1

Description

RoHS Compliance

Manufacture

Mitsubishi Electric

Total Page 9 Pages
Datasheet
Download RA45H7687M1 Datasheet


RA45H7687M1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA45H7687M1
RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H7687M1 is a 45-watt RF MOSFET Amplifier
Module for 12.8-volt mobile radios that operate in the 764- to
870-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small
leakage current flows into the drain and the nominal output
signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is
supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the
gate voltage 1 is kept in 3.4V. The nominal output power
becomes available at the state that VGG2 is 4V (typical) and 5V
(maximum). At this point, VGG1 has to be kept in 3.4V.
At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
with the input power.
BLOCK DIAGRAM
2
3
14
5
1 RF Input added Gate Voltage 1(Pin&VGG1)
2 Gate Voltage 2(VGG2), Power Control
3 Drain Voltage (VDD), Battery
FEATURES
4 RF Output (Pout)
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.8V, VGG=0V)
www.DataSheet4U.com
• P >45W,out
ηT>33%
@VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
• Broadband Frequency Range: 764-870MHz
5 RF Ground (Case)
PACKAGE CODE: H2M
• Metal cap structure that makes the improvements of RF
radiation simple
• Low-Power Control Current IGG1+IGG2=0.4mA (typ) @ VGG1=3.4V, VGG2=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA45H7687M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA45H7687M1-101
RA45H7687M1
SUPPLY FORM
Antistatic tray,
10 modules/tray
MITSUBISHI ELECTRIC
1/9
18th Jan 2007

RA45H7687M1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA45H7687M1
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG1=3.4V ± 7%, VGG2<5V, Pin=0W
VGG1 Gate Voltage 1
VGG2<5V, VDD<12.8V, Pin=50mW
VGG2 Gate Voltage 2
VGG1=3.4V ± 7%, VDD<12.8V, Pin=50mW
Pin
Pout
Tcase(OP)
Input Power
Output Power
Operation Case Temperature Range
f=764-870MHz,
VGG1=3.4V ± 7%, VGG2<5V
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
17
4.5
6
100
60
-30 to +100
-40 to +110
UNIT
V
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
F
Pout1
ηT
2fo
3fo
ρin
IDD
Pout2
Frequency Range
Output Power 1
Total Efficiency
2nd Harmonic
3nd Harmonic
Input VSWR
Leakage Current
Output Power 2*
Stability
Load VSWR Tolerance
VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
VDD=12.8V
VGG1=3.4V
VGG2=5V
Pin=50mW
VDD=17V, VGG1=VGG2=0V, Pin=0W
VDD=15.2V, VGG1=3.4V, VGG2=1V, Pin=2dBm
VDD=10.0-15.2V, Pin=1-100mW,
1.5<Pout <50W (VGG2 control, VGG1=3.4V),
Load VSWR=3:1
VDD=15.2V, Pin=50mW,
Pout=45W (VGG2 control, VGG1=3.4V),
Load VSWR=20:1
764 870 MHz
45 W
33 %
-40 dBc
-35 dBc
3:1 —
1 mA
1.5 W
No parasitic oscillation
No degradation or destroy —
*: This is guaranteed as design value.
All parameters, conditions, ratings, and limits are subject to change without notice.
RA45H7687M1
MITSUBISHI ELECTRIC
2/9
18th Jan 2007


Features MITSUBISHI RF MOSFET MODULE ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RA45H7687M1 BLOCK DIAGRAM 2 3 RoHS Compliance, 764-870MHz 45W 12.8V , 2 Stage Amp. For MOBILE RADIO DESCRI PTION The RA45H7687M1 is a 45-watt RF M OSFET Amplifier Module for 12.8-volt mo bile radios that operate in the 764- to 870-MHz range. The battery can be conn ected directly to the drain of the enha ncement-mode MOSFET transistors. Withou t the gate voltage 1 and the gate volta ge 2(VGG1=VGG2=0V), only a small leakag e current flows into the drain and the nominal output signal (Pout=45W) attenu ates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current inc rease as the gate voltage 2 increases. The output power and the drain current increase substantially with the gate vo ltage 2 around 0V (minimum) under the c ondition when the gate voltage 1 is kep t in 3.4V. The nominal output power bec omes available at the state that VGG2 is 4V (typical) and 5V (m.
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