RA60H4452M1 Power Modules Datasheet

RA60H4452M1 Datasheet, PDF, Equivalent


Part Number

RA60H4452M1

Description

Silicon RF Power Modules

Manufacture

Mitsubishi Electric

Total Page 10 Pages
Datasheet
Download RA60H4452M1 Datasheet


RA60H4452M1
< Silicon RF Power Modules >
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H4452M1 is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the nominal output signal (Pout=60W) attenuates up to 60 dB.
The output power and the drain current increase as the gate
voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
VGG is 4V (typical) and 5V (maximum).
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
BLOCK DIAGRAM
2
3
1
4
5
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD 0 @ VDD=12.5V, VGG=0V)
• Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA60H4452M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA60H4452M1-501
SUPPLY FORM
Antistatic tray,
10 modules/tray
Publication Date :May.2017
1

RA60H4452M1
< Silicon RF Power Modules >
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<5V, Pin=0W
VGG Gate Voltage
VDD<12.5V, Pin=50mW
Idd Total Current
-
Pin
Pout
Tcase(OP)
Input Power
Output Power
Operation Case Temperature Range
f=440-520MHz,
VGG<5V
Tstg Storage Temperature Range
-
The above parameters are independently guaranteed.
RATING
17
6
15
100
80
-30 to +100
-40 to +110
UNIT
V
V
A
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
F Frequency Range
Pout Output Power
VDD=12.5V
T Total Efficiency
2fo 2nd Harmonic
VGG=5V
Pin=50mW
in Input VSWR
IGG Gate Current
VDD=0V, VGG=5V, Pin=0W
— Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout =5-65W ,Load VSWR=3:1(All Phese)
VDD=15.2V,Pin=50mW,Pout=60W,
— Load VSWR Tolerance
Load VSWR=20:1(All Phese)
440 - 520 MHz
60 -
-W
40 -
-%
- - -35 dBc
- - 3:1 —
- 5 6 mA
No parasitic oscillation —
No degradation or
destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : May.2017
2


Features MITSUBISHI RF MOSFET MODULE ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RA60H4452M1 BLOCK DIAGRAM 2 3 RoHS Compliance, 440-520MHz 60W 12.5V , 2 Stage Amp. For MOBILE RADIO DESCRI PTION The RA60H4452M1 is a 60-watt RF M OSFET Amplifier Module for 12.5-volt mo bile radios that operate in the 440- to 520-MHz range. The battery can be conn ected directly to the drain of the enha ncement-mode MOSFET transistors. Withou t the gate voltage (VGG=0V), only a sma ll leakage current flows into the drain and the nominal output signal (Pout=60 W) attenuates up to 60 dB. The output p ower and the drain current increase as the gate voltage increases. The output power and the drain current increase su bstantially with the gate voltage aroun d 0V(minimum). The nominal output power becomes available at the state that VG G is 4V (typical) and 5V (maximum). At VGG=5V, the typical gate currents are 5 mA.This module is designed for non-line ar FM modulation, but may also be used for linear modulation by.
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