RD00HHS1 RoHS Compliance Datasheet

RD00HHS1 Datasheet, PDF, Equivalent


Part Number

RD00HHS1

Description

RoHS Compliance

Manufacture

Mitsubishi Electric

Total Page 6 Pages
Datasheet
Download RD00HHS1 Datasheet


RD00HHS1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
DESCRIPTION
RD00HHS1 is a MOS FET type transistor specifically
designed for HF RF amplifiers applications.
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF Band
mobile radio sets.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
1.5+/-0.1
LOT No.
123
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
www.DataSheet4U.com 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS
Drain to source voltage Vgs=0V
30 V
VGSS
Gate to source voltage Vds=0V
±10 V
Pch Channel dissipation Tc=25°C
3.1 W
Pin Input power
Zg=Zl=50
10 mW
ID Drain current
- 200 mA
Tch Channel Temperature
-
150 °C
Tstg Storage temperature
- -40 to +125 °C
Rth j-c Thermal resistance
Junction to case
40
°C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
Vth
Pout
ηD
Zero gate voltage drain current VDS=17V, VGS=0V
Gate to source leak current VGS=10V, VDS=0V
Gate threshold Voltage
VDS=12V, IDS=1mA
Output power
VDD=12.5V, Pin=4mW,
Drain efficiency
f=30MHz,Idq=50mA
Note : Above parameters , ratings , limits and conditions are subject to change.
LIMITS
MIN TYP MAX.
- - 25
- -1
123
0.3 0.7
-
55 65
-
UNIT
uA
uA
V
W
%
RD00HHS1
MITSUBISHI ELECTRIC
1/6
10 Jan 2006

RD00HHS1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
4 AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
3
On PCB(*1) with Heat-sink
2
1
On PCB(*1)
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vgs-Ids CHARACTERISTICS
0.6
Ta=+25°C
0.5 Vds=10V
0.4
0.3
0.2
0.1
0.0
012345
Vgs(V)
Vds-Ids CHARACTERISTICS
1.4
1.2 Ta=+25°C
1.0
0.8
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
0.6 Vgs=5V
0.4
Vgs=4V
0.2
Vgs=3V
0.0
0 2 4 6 8 10
Vds(V)
Vds VS. Ciss CHARACTERISTICS
20
Ta=+25°C
f=1MHz
15
10
5
0
0 5 10 15 20
Vds(V)
Vds VS. Coss CHARACTERISTICS
20
Ta=+25°C
f=1MHz
15
10
5
0
0 5 10 15 20
Vds(V)
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
2
1
0
0 5 10 15 20
Vds(V)
RD00HHS1
MITSUBISHI ELECTRIC
2/6
10 Jan 2006


Features MITSUBISHI RF POWER MOS FET ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RD00HHS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3 1.5+/-0.1 0. 1 RoH S Compliance, DESCRIPTION Silicon MOSF ET Power Transistor 30MHz,0.3W OUTLINE DRAWING 1.5+/-0.1 RD00HHS1 is a MOS FE T type transistor specifically designed for HF RF amplifiers applications. TYP E NAME FEATURES High power gain Pout>0 .3W, Gp>19dB @Vdd=12.5V,f=30MHz 0.8 MI N 2.5+/-0.1 1 2 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For ou tput stage of high power amplifiers in HF Band mobile radio sets. 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX RoHS COM PLIANT RD00HHS1-101,T113 is a RoHS comp liant products. This product include th e lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Direction s. www.DataSheet4U.com 1.Lead in high m elting temperature type solders(i.e.tin -lead solder alloys containing more than85% lead.) ABSOLUTE MA.
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