RD02MUS2 RoHS Compliance Datasheet

RD02MUS2 Datasheet, PDF, Equivalent


Part Number

RD02MUS2

Description

RoHS Compliance

Manufacture

Mitsubishi Electric

Total Page 9 Pages
Datasheet
Download RD02MUS2 Datasheet


RD02MUS2
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD02MUS2
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
OUTLINE DRAWING
RD02MUS2 is a MOS FET type transistor
specifically designed for VHF/UHF RF po
6.0+/-0.15
-wer amplifiers applications.
This device have an interal monolithic zener
diode from gate to source for ESD protection.
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
FEATURES
•High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz,520MHz
•High Efficiency:65%typ.(175MHz)
•High Efficiency:65%typ.(520MHz)
•Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
INDEX MARK
(Gate)
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
(0.25)
RoHS COMPLIANT
www.DataSheet4U.com
RD02MUS2-101,T112 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD02MUS2
MITSUBISHI ELECTRIC
1/9
17 Jan. 2006

RD02MUS2
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD02MUS2
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage Vgs=0V
VGSS Gate to source voltage Vds=0V
Pch
Channel dissipation
Tc=25°C
Pin Input Power
Zg=Zl=50
ID Drain Current
-
Tch Junction temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resisitance
Junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
30
-5/+10
21.9
0.1
1.5
150
-40 to +125
5.7
UNIT
V
V
W
W
A
°C
°C
°C/W
SCHEMATIC DRAWING
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate Voltage drain current VDS=17V, VGS=0V
- - 100
IGSS Gate to source leak current VGS=10V, VDS=0V
- -1
Vth Gate threshold Voltage
VDS=12V, IDS=1mA
1 1.8 3
Pout1 Output power
VDD=7.2V, Pin=50mW,
23 -
ηD1 Drain efficiency
f=175MHz Idq=200mA
55 65
-
Pout2 Output power
VDD=7.2V, Pin=50mW,
23 -
ηD2 Drain efficiency
f=520MHz Idq=200mA
50 65
-
VDD=9.2V,Po=2W(Pin Control)
Load VSWR tolerance
f=175MHz,Idq=200mA,Zg=50
No destroy
Load VSWR=20:1(All Phase)
VDD=9.2V,Po=2W(Pin Control)
Load VSWR tolerance
f=520MHz,Idq=200mA,Zg=50
No destroy
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
W
%
-
-
RD02MUS2
MITSUBISHI ELECTRIC
2/9
17 Jan. 2006


Features MITSUBISHI RF POWER MOS FET ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RD02MUS2 0.2+/-0.05 (0.22) (0 .22) (0.25) RoHS Compliance,Silicon MO SFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS2 is a MOS FET type transistor specifically designed for V HF/UHF RF po -wer amplifiers applicatio ns. This device have an interal monolit hic zener diode from gate to source for ESD protection. OUTLINE DRAWING 4.6+ /-0.05 3.3+/-0.05 0.8+/-0.05 6.0+/-0.1 5 1 4.9+/-0.15 1.0+/-0.05 2 FEATURES •High power gain: Pout>2W, Gp>16dB @ Vdd=7.2V,f=175MHz,520MHz •High Effici ency:65%typ.(175MHz) •High Efficiency :65%typ.(520MHz) •Integrated gate pro tection diode 3 (0.25) INDEX MARK (Gat e) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm APPLICATION For output stage of high p ower amplifiers In VHF/UHF band mobile radio sets. RoHS COMPLIANT www.DataShe et4U.com RD02MUS2-101,T112 is a RoHS compliant products. RoHS complian.
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