RD05MMP1 MOS FET Datasheet

RD05MMP1 Datasheet, PDF, Equivalent


Part Number

RD05MMP1

Description

Silicon RF Power MOS FET

Manufacture

Mitsubishi Electric

Total Page 9 Pages
Datasheet
Download RD05MMP1 Datasheet


RD05MMP1
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
DESCRIPTION
RD05MMP1 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
OUTLINE DRAWING
8.0+/-0.2
(d)
0.2+/-0.05
(b)
7.0+/-0.2
(a)
(b)
FEATURES
•High power gain:
Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
•High Efficiency: 43%min. (941MHz)
• Integrated gate protection diode
INDEX MARK
[Gate]
APPLICATION
For output stage of high power amplifiers in
941MHz band mobile radio sets.
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW SIDE VIEW
DETAIL A
SIDE VIEW
DETAIL A
(c)
BOTTOM VIEW
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
UNIT:mm
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD05MMP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting
temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage
Vgs=0V
VGSS Gate to source voltage
Vds=0V
Pch *
Channel dissipation
Tc=25°C
Pin Input Power
Zg=Zl=50
ID Drain Current
-
Tch Junction Temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
Junction to case
Note: Above parameters are guaranteed independently.
* Theoretical value in case of mounted on infinite heat sink.
RATINGS
30
-5/+10
73
1.4
3
150
-40 to +125
1.7
UNIT
V
V
W
W
A
°C
°C
°C/W
Publication Date : Mar.2017
1

RD05MMP1
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 10
IGSS Gate to source leak current
VGS=10V, VDS=0V
- -1
VTH Gate threshold Voltage
VDS=12V, IDS=1mA
0.5 - 2.5
Pout
D
Output power
Drain efficiency
f=941MHz , VDD=7.2V
Pin=0.7W,Idq=1.0A
5.5 6
43 -
-
-
VSWRT Load VSWR tolerance
VDD=9.5V,Po=5.5W(Pin Control)
f=941MHz,Idq=1.0A,Zg=50
No destroy
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
Publication Date : Mar.2017
2


Features MITSUBISHI RF POWER MOS FET ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RD05MMP1 (a) 0.2+/-0.05 0.65+ /-0.2 (c) (b) 7.0+/-0.2 (b) 8.0+/-0.2 6 .2+/-0.2 4.2+/-0.2 5.6+/-0.2 RoHS Comp liance, Silicon MOSFET Power Transistor , 941MHz, 5.5W DESCRIPTION RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers ap plications. (3.6) OUTLINE DRAWING (d) FEATURES •High power gain: Pout>5.5 W, Gp>8.9dB@Vdd=7.2V,f=941MHz •High E fficiency: 43%min. (941MHz) •No gate protection diode INDEX MARK [Gate] (4. 5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DET AIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Sour ce [GND] (c)Gate [input] (d)Source APP LICATION For output stage of high power amplifiers in 941MHz band mobile radio sets. SIDE VIEW Standoff = max 0.05 0 .7+/-0.1 UNIT:mm DETAIL A NOTES: 1. ( ) Typical value RoHS COMPLIANT RD05MM P1 is a RoHS compliant product. RoHS co mpliance is indicating by the letter “G” after the Lot Marking. This .
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