RD06HHF1 MOS FET Datasheet

RD06HHF1 Datasheet, PDF, Equivalent


Part Number

RD06HHF1

Description

Silicon RF Power MOS FET

Manufacture

Mitsubishi Electric

Total Page 9 Pages
Datasheet
Download RD06HHF1 Datasheet


RD06HHF1
< Silicon RF Power MOS FET (Discrete) >
RD06HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W
DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
OUTLINE DRAWING
9.1+/-0.7
1.3+/-0.4
FEATURES
High power gain:
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
3.6+/-0.2
2
1.2+/-0.4
APPLICATION
0.8+0.10/-0.15
For output stage of high power amplifiers in
HF band mobile radio sets.
123
2.5 2.5
0.5+0.10/-0.15
5deg
RoHS COMPLIANT
RD06HHF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
PINS
1:GAT E
9.5MAX
2:SOURCE
note:
3:DRAIN
Torelance of no designation means typical value.
Dimension in mm.
marking.
This product include the lead in high melting temperaturetype solders.
However,it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct.2011
1

RD06HHF1
< Silicon RF Power MOS FET (Discrete) >
RD06HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage
Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch Channel dissipation
Tc=25°C
Pin Input power
Zg=Zl=50
ID Drain current
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
50
+/- 20
27.8
0.3
3
150
-40 to +150
4.5
UNIT
V
V
W
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS Drain cutoff current
VDS=17V, VGS=0V
IGSS Gate cutoff current
VGS=10V, VDS=0V
VTH Gate threshold Voltage
VDS=12V, IDS=1mA
Pout
D
Output power
Drain efficiency
Load VSWR tolerance
VDD=12.5V, Pin=0.15W,
f=30MHz, Idq=0.5A
VDD=15.2V,Po=6W(Pin Control)
f=30MHz,Idq=0.5A,Zg=50
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
LIMITS
MIN TYP MAX.
- - 10
- -1
1.9 - 4.9
6 10 -
55 65
-
No destroy
UNIT
uA
uA
V
W
%
-
Publication Date : Oct.2011
2


Features MITSUBISHI RF POWER MOS FET ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RD06HHF1 9.1+/-0.7 1.3+/-0.4 3.6+/-0.2 Silicon MOSFET Power Transis tor 30MHz,6W DESCRIPTION RD06HHF1 is a MOS FET type transistor specifically de signed for HF RF power amplifiers appli cations. OUTLINE DRAWING 3.2+/-0.4 4.8 MAX 9+/-0.4 •High power gain: Pout> 6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/- 0.6 FEATURES 2 For output stage of h igh power amplifiers in HF band mobile radio sets. 12.3MIN APPLICATION 1.2+ /-0.4 0.8+0.10/-0.15 1 2 3 0.5+0.10/-0 .15 2.5 2.5 3.1+/-0.6 4.5+/-0.5 5deg P IN 1.Gate 2.Source 3.Drain UNIT:mm 9.5 MAX ABSOLUTE MAXIMUM RATINGS www.DataS heet4U.com (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current C hannel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vd s=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS UNIT 50 V +/- 20 V.
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