RD45HMF1 Power Transistor Datasheet

RD45HMF1 Datasheet, PDF, Equivalent


Part Number

RD45HMF1

Description

Silicon MOSFET Power Transistor

Manufacture

Mitsubishi Electric

Total Page 7 Pages
Datasheet
Download RD45HMF1 Datasheet


RD45HMF1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W
DESCRIPTION
RD45HMF1 is a MOS FET type transistor specifically
designed for 900MHz-band High power amplifiers
applications.
FEATURES
•High power and High Gain:
Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz
•High Efficiency: 50%typ.
APPLICATION
For output stage of high power amplifiers in
800-900MHz Band mobile radio sets.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
4-C2
3
5.0+/-0.3
18.5+/-0.3
2
R1.6+/-0.15
0.1
+0.05
-0.01
4.5+/-0.7
6.2+/-0.7
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
www.DataSheet4U.com
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch Channel dissipation
Tc=25°C
Pin Input power
Zg=Zl=50
ID Drain current
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
30
+/-20
125
25
15
175
-40 to +175
1.2
UNIT
V
V
W
W
A
°C
°C
°C/W
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V
- - 10
IGSS Gate to source leak current VGS=10V, VDS=0V
--1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.0 - 3.0
Pout Output power
f=900MHz ,VDD=12.5V
45 50
-
ηD Drain efficiency
Pin=15W,Idq=2.0A
45 50
-
Load VSWR tolerance
VDD=15.2V,Po=45W(PinControl)
Idq=2.0A,Zg=50
Load VSWR=20:1(All Phase)
No destroy
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD45HMF1
MITSUBISHI ELECTRIC
1/7
REV.2 7 Apr. 2003

RD45HMF1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
160 AMBIENT TEMPERATURE
120
80
40
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
4
2
0
01234
Vgs(V)
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
8
Vgs=4V
Vgs=3.7V
6 Vgs=3.4V
4 Vgs=3.1V
Vgs=2.8V
2 Vgs=2.5V
Vgs=2.2V
0
0 2 4 6 8 10
Vds(V)
Vds VS. Ciss CHARACTERISTICS
300
250
200
Ta=+25°C
f=1MHz
150
100
50
0
0 5 10 15 20
Vds(V)
Vds VS. Coss CHARACTERISTICS
500
400
Ta=+25°C
f=1MHz
300
200
100
0
0 5 10 15 20
Vds(V)
Vds VS. Crss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
20
10
0
0 5 10 15 20
Vds(V)
RD45HMF1
MITSUBISHI ELECTRIC
2/7
REV.2 7 Apr. 2003


Features MITSUBISHI RF POWER MOS FET ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RD45HMF1 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 Silicon MOSFET Power Tra nsistor 900MHz,45W DESCRIPTION RD45HMF1 is a MOS FET type transistor specifica lly designed for 900MHz-band High power amplifiers applications. OUTLINE DRAWI NG 4-C2 24.0+/-0.6 •High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12. 5V,f=900MHz •High Efficiency: 50%typ. 2 10.0+/-0.3 FEATURES 9.6+/-0.3 0 .1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0. 7 6.2+/-0.7 APPLICATION For output sta ge of high power amplifiers in 800-900M Hz Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc= 25°C UNLESS OTHERWISE NOTED) www.DataS heet4U.com SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to sou rce voltage Gate to source voltage Chan nel dissipation Input power Drain curre nt Channel temperature Storage temperat ure Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω j.
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