2SJ604

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ604 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES Super low on-state resistance: RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −23 A) RDS(on)2 = 43 mΩ MAX. (VGS = −4.0 V, ID = −23 A) Low input capacitance: Ciss = 3300 pF TYP. (VDS = −10 V, VGS = 0 V) Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −60 Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) VGSS ID(DC) ID(pulse) PT m 20 m 45 m 120 70 Total Power Dissipation (TA = 25°C) PT 1.5 Channel Temperature Tch 150 Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg −55 to +150 IAS −35 EAS 123 ORDERING INFORMATION PART NUMBER PACKAGE 2SJ604 TO-220AB 2SJ604-S TO-262 2SJ604-ZJ 2SJ604-Z TO-263 TO-220SMD Note Note TO-220SMD package is produced only in Japan (TO-220AB) V V A A W W (TO-262) °C °C A mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availabilit...