2SJ606

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ606 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ606 2SJ606-S 2SJ606-ZJ 2SJ606-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES Super low on-state resistance: RDS(on)1 = 15 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.0 V, ID = −42 A) Low input capacitance: Ciss = 4800 pF TYP. (VDS = −10 V, VGS = 0 V) Built-in gate protection diode Note TO-220SMD package is produced only in Japan (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) www.DataSheet4U.com VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg −60 V V A A W W °C °C A mJ (TO-262) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 m 20 m 83 m 300 120 1.5 150 −55 to +150 −40 160 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability a...