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2SJ607 Dataheets PDF



Part Number 2SJ607
Manufacturers NEC
Logo NEC
Description MOS FIELD EFFECT TRANSISTOR
Datasheet 2SJ607 Datasheet2SJ607 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ607 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ607 2SJ607-S 2SJ607-ZJ 2SJ607-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = 7500 pF TYP. (VD.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ607 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ607 2SJ607-S 2SJ607-ZJ 2SJ607-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = 7500 pF TYP. (VDS = −10 V, VGS = 0 V) • Built-in gate protection diode Note TO-220SMD package is produced only in Japan (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) www.DataSheet4U.com VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg −60 V V A A W W °C °C A mJ (TO-262) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 m 20 m 83 m 332 160 1.5 150 −55 to +150 −50 250 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14655EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 2000, 2001 2SJ607 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time www.DataSheet4U.com TEST CONDITIONS VDS = −60 V, VGS = 0 V VGS = MIN. TYP. MAX. −10 UNIT µA µA V S m 20 V, VDS = 0 V −1.5 45 −2.0 90 9.1 11 7500 1800 430 23 16 340 160 m 10 −2.5 VDS = −10 V, ID = −1 mA VDS = −10 V, ID = −42 A VGS = −10 V, ID = −42 A VGS = −4.0 V, ID = −42 A VDS = −10 V VGS = 0 V f = 1 MHz VDD = −30 V, ID = −42 A VGS = −10 V RG = 0 Ω 11 16 mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD= −48 V VGS = −10 V ID = −83 A IF = 83 A, VGS = 0 V IF = 83 A, VGS = 0 V di/dt = 100 A/ µs 188 30 48 1.0 64 150 Reverse Recovery Charge TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = −20 → 0 V − ID VDD BVDSS VDS 50 Ω L VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD VDS (−) 90% 90% 10% 10% VGS (−) VGS Wave Form 0 10% VGS .


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