2SJ607 EFFECT TRANSISTOR Datasheet

2SJ607 Datasheet, PDF, Equivalent


Part Number

2SJ607

Description

MOS FIELD EFFECT TRANSISTOR

Manufacture

NEC

Total Page 8 Pages
Datasheet
Download 2SJ607 Datasheet


2SJ607
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ607
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ607 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 11 mMAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 16 mMAX. (VGS = 4.0 V, ID = 42 A)
Low input capacitance:
Ciss = 7500 pF TYP. (VDS = 10 V, VGS = 0 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
www.DataSheet4U.com
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VGSS
ID(DC)
ID(pulse)
m 20
m 83
m 332
Total Power Dissipation (TC = 25°C)
PT 160
Total Power Dissipation (TA = 25°C)
PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg 55 to +150
IAS 50
EAS 250
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ607
TO-220AB
2SJ607-S
TO-262
2SJ607-ZJ
2SJ607-Z
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
V
V
A
A
W
W (TO-262)
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14655EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000, 2001

2SJ607
2SJ607
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = 60 V, VGS = 0 V
VGS = m 20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 42 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 42 A
RDS(on)2 VGS = 4.0 V, ID = 42 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 42 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0
Fall Time
tf
Total Gate Charge
QG VDD= 48 V
Gate to Source Charge
QGS VGS = 10 V
Gate to Drain Charge
QGD ID = 83 A
Body Diode Forward Voltage
VF(S-D) IF = 83 A, VGS = 0 V
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Reverse Recovery Time
Reverse Recovery Charge
trr IF = 83 A, VGS = 0 V
Qrr di/dt = 100 A/ µs
MIN.
1.5
45
TYP.
2.0
90
9.1
11
7500
1800
430
23
16
340
160
188
30
48
1.0
64
150
MAX. UNIT
10
m 10
2.5
µA
µA
V
S
11 m
16 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS ()
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS ()
VGS
Wave Form
0 10%
VDS ()
VDS
Wave Form
90%
VDS
0
td(on)
90%
VGS
10% 10%
90%
tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14655EJ3V0DS


Features DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ607 SWITCHING P-CHANNEL POWER MOS F ET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed f or high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ6 07 2SJ607-S 2SJ607-ZJ 2SJ607-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resista nce: RDS(on)1 = 11 mΩ MAX. (VGS = − 10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = 7500 pF TYP. (VDS = −10 V, VGS = 0 V) • Bui lt-in gate protection diode Note TO-22 0SMD package is produced only in Japan (TO-220AB) ABSOLUTE MAXIMUM RATINGS ( TA = 25°C) Drain to Source Voltage (VG S = 0 V) www.DataSheet4U.com VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg −60 V V A A W W °C °C A mJ (TO-262) Ga te to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 m 20 m 83 m 332 160 1.5 150 −55 to +150 −50 250 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA.
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