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2SJ643 Dataheets PDF



Part Number 2SJ643
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description P CHANNEL MOS SILICON TRANSISTOR
Datasheet 2SJ643 Datasheet2SJ643 Datasheet (PDF)

Ordering number : ENN7309 2SJ643 P-Channel Silicon MOSFET 2SJ643 Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions unit : mm 2083B [2SJ643] 6.5 5.0 4 1.5 2.3 0.5 Low ON-resistance. 1.8V drive. 0.85 0.7 0.8 1.6 1.2 7.5 0.5 1 2 3 0.6 5.5 7.0 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 www.DataSheet4U.com SANYO : TP Package Dimensions unit : mm 2092B [2SJ643] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 1 0.6 0.5 0.8 2 3 2.5 1.2 1.2 0 to 0.2 1 : G.

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Ordering number : ENN7309 2SJ643 P-Channel Silicon MOSFET 2SJ643 Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions unit : mm 2083B [2SJ643] 6.5 5.0 4 1.5 2.3 0.5 Low ON-resistance. 1.8V drive. 0.85 0.7 0.8 1.6 1.2 7.5 0.5 1 2 3 0.6 5.5 7.0 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 www.DataSheet4U.com SANYO : TP Package Dimensions unit : mm 2092B [2SJ643] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 1 0.6 0.5 0.8 2 3 2.5 1.2 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83002 TS IM TA-100036 No.7309-1/4 2SJ643 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Conditions Ratings --20 ±10 --6 --24 1 10 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time www.DataSheet4U.com Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1mA, VGS=0 VDS=--20V, VGS=0 VGS= ±8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-3A ID=--3A, VGS=--4V ID=--1.5A, VGS=-2.5V ID=--0.1A, VGS=-1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=-6A VDS=--10V, VGS=-4V, ID=-6A VDS=--10V, VGS=-4V, ID=-6A IS=--6A, VGS=0 Ratings min --20 --10 ±10 --0.3 2.1 3 120 150 200 410 60 40 10 20 30 10 4.4 0.6 1.2 --1.0 --1.2 160 210 300 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Marking : J643 Switching Time Test Circuit VIN 0V --4V VIN PW=10µs D.C.≤1% ID= --3A RL=3.33Ω VDD= --10V D VOUT G 2SJ643 P.G 50Ω S No.7309-2/4 2SJ643 --6 ID -- VDS --1 0 --4 V V --8 ID -- VGS VDS= --10V Drain Current, ID -- A --4 --2 .5 V V --1.8 Drain Current, ID -- A --3 V --6 --4 --1.5V --2 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 Tc =7 5 VGS= --1.0V --1.0 °C 25 °C --2 5°C --1.5 --2 --2.0 --2.5 --3.0 IT05013 Drain-to-Source Voltage, VDS -- V 400 IT05012 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 400 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --3A --1.5A 300 Tc=25°C 350 300 250 200 150 100 50 0 --60 --0.1A 250 200 150 100 50 0 0 --2 --4 --6 --8 --10 IT05014 V = --1.8 , V GS A .1 0 I D= -V = --2.5 A, V GS .5 1 -I D= I D= --3A --4V , V GS= --40 --20 0 20 40 60 80 100 120 140 160 www.DataSheet4U.com Gate-to-Source Voltage, VGS -- V 10 yfs -- ID Case Temperature, Tc -- °C --10 7 5 3 IT05015 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS= --10V 7 5 3 2 0.1 --0.01 2 --0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 --0.01 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --25 ° --0.8 --0.9 Tc = 3 C 1.0 75 75 ° 25 C °C Tc -2 =- C 5° Forward Current, IF -- A 2 --1.0 7 5 °C 5°C 2 --1.0 --1.1 --1.2 Drain Current, ID -- A 5 3 IT05016 1000 SW Time -- ID VDD= --10V VGS= --4V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT05017 7 5 3 2 Switching Time, SW Time -- ns 2 Ciss 100 7 5 3 2 td (of f) 100 7 5 3 2 tf 10 7 5 3 7 --0.1 td(on) tr Coss Crss 2 3 5 7 --1.0 2 3 5 7 --10 2 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID -- A IT05018 Drain-to-Source Voltage, VDS -- V .


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