Document
Ordering number : ENN7309
2SJ643
P-Channel Silicon MOSFET
2SJ643
Ultrahigh-Speed Switching Applications
Preliminary Features
• •
Package Dimensions
unit : mm 2083B
[2SJ643]
6.5 5.0 4 1.5 2.3 0.5
Low ON-resistance. 1.8V drive.
0.85 0.7 0.8 1.6 1.2 7.5 0.5 1 2 3
0.6
5.5
7.0
1 : Gate 2 : Drain 3 : Source 4 : Drain
2.3
2.3
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SANYO : TP
Package Dimensions
unit : mm 2092B
[2SJ643]
6.5 5.0 4 2.3
1.5
0.5
5.5
7.0
0.85 1 0.6
0.5
0.8
2
3
2.5
1.2
1.2 0 to 0.2
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA
2.3
2.3
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83002 TS IM TA-100036 No.7309-1/4
2SJ643 Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Conditions Ratings --20 ±10 --6 --24 1 10 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time
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Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD
Conditions ID=--1mA, VGS=0 VDS=--20V, VGS=0 VGS= ±8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-3A ID=--3A, VGS=--4V ID=--1.5A, VGS=-2.5V ID=--0.1A, VGS=-1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=-6A VDS=--10V, VGS=-4V, ID=-6A VDS=--10V, VGS=-4V, ID=-6A IS=--6A, VGS=0
Ratings min --20 --10 ±10 --0.3 2.1 3 120 150 200 410 60 40 10 20 30 10 4.4 0.6 1.2 --1.0 --1.2 160 210 300 --1.0 typ max
Unit V
µA µA
V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V
Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage
Marking : J643
Switching Time Test Circuit
VIN 0V --4V VIN PW=10µs D.C.≤1% ID= --3A RL=3.33Ω VDD= --10V
D
VOUT
G
2SJ643 P.G 50Ω
S
No.7309-2/4
2SJ643
--6
ID -- VDS
--1 0 --4 V V
--8
ID -- VGS
VDS= --10V
Drain Current, ID -- A
--4
--2
.5
V
V --1.8
Drain Current, ID -- A
--3 V
--6
--4
--1.5V
--2
0 0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5
Tc =7 5
VGS= --1.0V
--1.0
°C 25 °C --2 5°C
--1.5
--2
--2.0
--2.5
--3.0 IT05013
Drain-to-Source Voltage, VDS -- V
400
IT05012
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
400
RDS(on) -- Tc
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
350
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
ID= --3A --1.5A
300
Tc=25°C
350 300 250 200 150 100 50 0 --60
--0.1A
250 200 150 100 50 0 0 --2 --4 --6 --8 --10 IT05014
V = --1.8 , V GS A .1 0 I D= -V = --2.5 A, V GS .5 1 -I D=
I D= --3A --4V , V GS=
--40
--20
0
20
40
60
80
100
120
140
160
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Gate-to-Source Voltage, VGS -- V
10
yfs -- ID
Case Temperature, Tc -- °C
--10 7 5 3
IT05015
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
7 5 3 2
VDS= --10V
7 5 3 2 0.1 --0.01
2 --0.1 7 5 3 2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
--0.01 --0.2 --0.3
--0.4 --0.5
--0.6
--0.7
--25 °
--0.8 --0.9
Tc =
3
C
1.0
75
75 ° 25 C °C
Tc
-2 =-
C 5°
Forward Current, IF -- A
2 --1.0 7 5
°C 5°C 2
--1.0
--1.1
--1.2
Drain Current, ID -- A
5 3
IT05016 1000
SW Time -- ID
VDD= --10V VGS= --4V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
IT05017
7 5 3 2
Switching Time, SW Time -- ns
2
Ciss
100 7 5 3 2
td (of f)
100 7 5 3 2
tf
10 7 5 3 7 --0.1
td(on)
tr
Coss
Crss
2
3
5
7 --1.0
2
3
5
7 --10
2
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
Drain Current, ID -- A
IT05018
Drain-to-Source Voltage, VDS -- V
.