2SJ647 EFFECT TRANSISTOR Datasheet

2SJ647 Datasheet, PDF, Equivalent


Part Number

2SJ647

Description

MOS FIELD EFFECT TRANSISTOR

Manufacture

NEC

Total Page 6 Pages
Datasheet
Download 2SJ647 Datasheet


2SJ647
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ647
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ647 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ647 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
RDS(on)1 = 1.45 MAX. (VGS = 4.5 V, ID = 0.2 A)
RDS(on)2 = 1.55 MAX. (VGS = 4.0 V, ID = 0.2 A)
RDS(on)3 = 2.98 MAX. (VGS = 2.5 V, ID = 0.15 A)
PACKAGE DRAWING (Unit: mm)
2.1 ± 0.1
1.25 ± 0.1
2
13
Marking
ORDERING INFORMATION
www.DataSheet4U.com
PART NUMBER
2SJ647
Remark Marking: H22
PACKAGE
SC-70 (SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation Note2
VGSS
ID(DC)
ID(pulse)
PT
m12
m0.4
m1.6
0.2
Channel Temperature
Tch 150
Storage Temperature
Tstg 55 to +150
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on FR-4 board of 2500 mm2 x 1.1 mm.
V
V
A
A
W
°C
°C
1 : Source
2 : Gate
3 : Drain
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD ±100 V TYP. at C = 200 pF, R = 0, Single Pulse.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16530EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2003

2SJ647
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = 20 V, VGS = 0 V
VGS = m12 V, VDS = 0 V
VDS = 10 V, ID = 1.0 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 0.2 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 4.5 V, ID = 0.2 A
RDS(on)2 VGS = 4.0 V, ID = 0.2 A
RDS(on)3 VGS = 2.5 V, ID = 0.15 A
Input Capacitance
Ciss VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 0.2 A
Rise Time
tr VGS = 4.0 V
Turn-off Delay Time
td(off)
RG = 10
Fall Time
tf
Body Diode Forward Voltage
VF(S-D) IF = 0.4 A, VGS = 0 V
TEST CIRCUIT SWITCHING TIME
www.DataSheet4U.com
D.U.T.
RG
PG.
VGS ()
0
τ
τ = 1µs
Duty Cycle 1%
RL
VDD
VGS()
VGS
Wave Form
10%
0
VGS 90%
VDS()
90%
VDS
VDS
Wave Form
0
td(on)
10% 10%
tr td(off)
90%
tf
ton toff
2SJ647
MIN. TYP. MAX. UNIT
1.0
m10
0.8 1.3 1.8
µA
µA
V
0.2 0.6
S
1.17 1.45
1.25 1.55
2.25 2.98
29 pF
15 pF
3 pF
23 ns
39 ns
50 ns
33 ns
0.93 V
2 Data Sheet D16530EJ1V0DS


Features DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ647 P-CHANNEL MOS FIELD EFFECT TRAN SISTOR FOR SWITCHING DESCRIPTION The 2 SJ647 is a switching device which can b e driven directly by a 2.5 V power sour ce. The 2SJ647 features a low on-state resistance and excellent switching char acteristics, and is suitable for applic ations such as power switch of portable machine and so on. PACKAGE DRAWING (U nit: mm) 0.3 +0.1 –0 2.1 ± 0.1 1.25 ± 0.1 0.65 FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A) RDS(on)2 = 1.55 Ω M AX. (VGS = −4.0 V, ID = −0.2 A) RDS (on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A) 2.0 ± 0.2 2 0.65 1 3 0.3 Marking 0.15 +0.1 –0.05 0. 9 ± 0.1 0.3 +0.1 –0 ORDERING INFOR MATION www.DataSheet4U.com PART NUMBER 2SJ647 PACKAGE SC-70 (SSP) 0 to 0.1 1 : Source 2 : Gate 3 : Drain Remark M arking: H22 ABSOLUTE MAXIMUM RATINGS ( TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current.
Keywords 2SJ647, datasheet, pdf, NEC, MOS, FIELD, EFFECT, TRANSISTOR, SJ647, J647, 647, 2SJ64, 2SJ6, 2SJ, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)