2SJ648 EFFECT TRANSISTOR Datasheet

2SJ648 Datasheet, PDF, Equivalent


Part Number

2SJ648

Description

MOS FIELD EFFECT TRANSISTOR

Manufacture

NEC

Total Page 6 Pages
Datasheet
Download 2SJ648 Datasheet


2SJ648
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ648
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ648 is a switching device which can be driven directly by a
2.5 V power source.
The 2SJ648 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
RDS(on)1 = 1.45 MAX. (VGS = 4.5 V, ID = 0.2 A)
RDS(on)2 = 1.55 MAX. (VGS = 4.0 V, ID = 0.2 A)
RDS(on)3 = 2.98 MAX. (VGS = 2.5 V, ID = 0.15 A)
ORDERING INFORMATION
www.DataSheet4U.com
PART NUMBER
2SJ648
Marking: H1
PACKAGE
SC-75 (USM)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
VGSS
ID(DC)
ID(pulse)
PT
m12
m0.4
m1.6
200
Channel Temperature
Tch 150
Storage Temperature
Tstg 55 to +150
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on ceramic substrate of 300 mm2 x 0.64 mm.
V
V
A
A
mW
°C
°C
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
3
2
0.2
+0.1
–0
1
0.5 0.5
1.0
1.6 ± 0.1
0 to 0.1
0.6
0.75 ± 0.05
1: Source
2: Gate
3: Drain
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution
This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD = ±100 V TYP. (C = 200 pF, R = 0 , Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16597EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2003

2SJ648
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 20 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = m12 V, VDS = 0 V
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 0.2 A
VGS = 4.5 V, ID = 0.2 A
RDS(on)2
RDS(on)3
VGS = 4.0 V, ID = 0.2 A
VGS = 2.5 V, ID = 0.15 A
Input Capacitance
Ciss VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 0.2 A
Rise Time
Turn-off Delay Time
tr
td(off)
VGS = 4.0 V
RG = 10
Fall Time
tf
Body Diode Forward Voltage
VF(S-D) IF = 0.4 A, VGS = 0 V
Note Pulsed PW 350 µs, Duty Cycle 2%
www.DataSheet4U.com
TEST CIRCUIT SWITCHING TIME
D.U.T.
VGS()
RL
VGS
Wave Form
10%
0
VGS 90%
RG
PG.
VGS ()
0
τ
VDD
VDS()
90%
VDS
VDS
Wave Form
0
td(on)
10% 10%
tr td(off)
90%
tf
ton toff
τ = 1µs
Duty Cycle 1%
2SJ648
MIN. TYP. MAX. UNIT
1.0 µA
m10
0.8 1.3 1.8
µA
V
0.2 0.6
S
1.17 1.45
1.25 1.55
2.25 2.98
29 pF
15 pF
3.0 pF
23 ns
39 ns
50 ns
33 ns
0.93 V
2 Data Sheet D16597EJ2V0DS


Features DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRAN SISTOR FOR SWITCHING DESCRIPTION The 2 SJ648 is a switching device which can b e driven directly by a 2.5 V power sour ce. The 2SJ648 features a low on-state resistance and excellent switching char acteristics, and is suitable for applic ations such as power switch of portable machine and so on. 1.6 ± 0.1 0.8 ± 0 .1 PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 0.15 +0.1 –0.05 3 0 to 0.1 2 0 .2 0.5 +0.1 –0 FEATURES • 2.5 V dr ive available • Low on-state resistan ce RDS(on)1 = 1.45 Ω MAX. (VGS = −4 .5 V, ID = −0.2 A) RDS(on)2 = 1.55 MAX. (VGS = −4.0 V, ID = −0.2 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A) 1 0.5 0.6 0.75 ± 0.05 1.0 1.6 ± 0.1 ORDERING INFORMA TION PART NUMBER www.DataSheet4U.com P ACKAGE SC-75 (USM) 1: Source 2: Gate 3 : Drain 2SJ648 Marking: H1 EQUIVALEN T CIRCUIT VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Note2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate .
Keywords 2SJ648, datasheet, pdf, NEC, MOS, FIELD, EFFECT, TRANSISTOR, SJ648, J648, 648, 2SJ64, 2SJ6, 2SJ, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)