KSD5703. D5703 Datasheet


D5703 KSD5703. Datasheet pdf. Equivalent


Part Number

D5703

Description

KSD5703

Manufacture

Fairchild Semiconductor

Total Page 5 Pages
Datasheet
Download D5703 Datasheet


D5703
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KSD5703
High Voltage Color Display Horizontal
Deflection Output
(No Damper Diode)
• High Collector-Base Voltage : VCBO=1500V
• High Switching Speed tF = 0.3µs (Max.)
• For Color TV
1 TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
1500
800
6
10
30
70
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICES
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
tF
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Fall Time
VCE = 1400V, VBE=0
VCB = 800V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 8A
IC = 8A, IB = 1.6A
IC = 8A, IB = 1.6A
VCC = 200V, IC = 6A
IB1 = 1.2A, IB2= - 2.4A
RL = 33.3
Min.
15
5.3
Typ.
0.1
Max.
1
10
1
40
7.3
5
1.5
0.3
Units
mA
µA
mA
V
V
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000

D5703
Typical Characteristics
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10
IB = 2.0A
IB = 1.8A
8 IB = 1.6A
IB = 1.4A
IB = 1.2A
6 IB = 1.0A
IB = 0.8A
IB = 0.6A
4 IB = 0.4A
IB = 0.2A
2
0
0 2 4 6 8 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
IC = 5IB
1
IC = 3IB
0.1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
1.0
tSTG
0.8
0.6
tF
0.4
IC = 4.5A
IC = 5.0A
IC = 5.5A
10
Icp/IB = 5
fH = 15.75kHz
TC = 25oC
8
6
4
0.2
0.0
0.0
IC = 5.5A
IC = 4.5A IC = 5.0A
2
0
0.4 0.8 1.2 1.6 2.0 2.4
dIB/dt[A/µs], BASE CURRENT GRADIENT
Figure 5. Switching Time
©2000 Fairchild Semiconductor International
100
VCE = 5V
10
1
0.1 1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
10
VCE = 5V
8
6
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
0.8
0.6
IC = 4.5A
tSTG
0.4
IC = 5.0A
IC = 5.5A
5
4
3
0.2
tF
IC = 4.5A
IC = 5.0A
IC = 5.5A
2
0.0 1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
IB1[A], BASE CURRENT
Figure 6. Switching Time
Rev. A, February 2000


Features KSD5703 KSD5703 High Voltage Color Disp lay Horizontal Deflection Output (No Da mper Diode) • High Collector-Base Vol tage : VCBO=1500V • High Switching Sp eed tF = 0.3µs (Max.) • For Color TV 1 TO-3PF 2.Collector 3.Emitter 1.Bas e NPN Triple Diffused Planar Silicon T ransistor Absolute Maximum Ratings TC=2 5°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC www.DataSheet4U.co m Parameter Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Vol tage Collector Current (DC) Collector C urrent (Pulse) Collector Dissipation (T C=25°C) Junction Temperature Storage T emperature Value 1500 800 6 10 30 70 1 50 - 55 ~ 150 Units V V V A A W °C ° C TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO hFE1 hFE2 VCE(sat) VBE(s at) tF Parameter Collector Cut-off Curr ent Collector Cut-off Current Emitter C ut-off Current DC Current Gain Collecto r-Emitter Saturation Voltage Base-Emitt er Saturation Voltage Fall Time Test Condition VCE = 1400V, VBE=0 VCB = 800.
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