WT6401 Power MOSFET Datasheet

WT6401 Datasheet, PDF, Equivalent


Part Number

WT6401

Description

P-Channel Enhancement Mode Power MOSFET

Manufacture

Weitron Technology

Total Page 6 Pages
Datasheet
Download WT6401 Datasheet


WT6401
WT6401
P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
RDS(ON)<50m@VGS=10V
*Rugged and Reliable
*Simple Drive Requirement
*Fast Switching
*1.8V Gate Rated
*SOT-23 Package
2
SOURCE
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System
www.DataSheet4U.com
DRAIN CURRENT
-4.3 AMPERS
DRAIN SOUCE VOLTAGE
-12 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25�C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3 ,VGS@10V(TA
Pulsed Drain Current1
,VGS@10V(TA
VGS
ID
IDM
Total Power Dissipation(TA=25℃)
PD
Maximum Junction-ambient3
R JA
Operating Junction and Storage Temperature Range
TJ, Tstg
Value
±
3
1.38
90
-55~+150
Unit
V
A
W
℃/W
Device Marking
WT6401=6401
WEITRON
http:www.weitron.com.tw
1/6
06-May-05

WT6401
WT6401
Electrical Characteristics (TA = 25℃ Unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
VGS=0,ID=-250μA
Gate-Source Threshold Voltage
VDS=VGS,ID=-250μA
Gate-Source Leakage Current
VGS= ±8V
Drain-Source Leakage Current(Tj=25℃)
VDS=-16V,VGS =0
Drain-Source Leakage Current(Tj=70℃)
VDS=-12V,VGS =0
Drain-Source On-Resistance2
VGS=-4.5V,ID=-4.3A
VGS=-2.5V,ID=-2.5A
VGS=-1.8V,ID=-2.0A
Forward Transconductance
VDS=-5.0,ID=-4.0A
Dynamic
Input Capacitance
VGS=0V,VDS=-15V,f=1.0MHz
Output Capacitance
VGS=0V,VDS=-15V,f=1.0MHz
Reverse Transfer Capacitance
VGS=0V,VDS=-15V,f=1.0MHz
BV DSS
-12
VGS(Th)
-
-
-
-
-1.0
V
IGSS
-
-
±100
nA
IDSS
-
-
- -1
μA
- -25
RDS(on)
gfs
-
-
-
-
- 50 mΩ
- 85
- 125
12 -
S
Ciss - 985 1580
Coss - 180 -
pF
Crss - 160 -
WEITRON
http:www.weitron.com.tw
2/6
06-May-05


Features WT6401 P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CU RRENT -4.3 AMPERS DRAIN SOUCE VOLTAGE - 12 VOLTAGE 2 Features: *Super High De nse Cell Design For Low RDS(ON) RDS(ON) <50mΩ@VGS=10V *Rugged and Reliable *S imple Drive Requirement *Fast Switching *1.8V Gate Rated *SOT-23 Package 3 1 2 SOT-23 Applications *Power Manageme nt in Notebook Computer *Portable Equip ment *Battery Powered System www.DataSh eet4U.com Maximum Ratings(T =25�C Un less Otherwise Specified) A Rating Dra in-Source Voltage Gate-Source Voltage C ontinuous Drain Current3 ,VGS@10V(TA ,V GS@10V(TA Pulsed Drain Current1 Total P ower Dissipation(TA=25 ℃ ) Maximum Ju nction-ambient3 Operating Junction and Storage Temperature Range Symbol VDS V GS ID IDM PD R JA Value Unit V ± 3 A 1.38 90 -55~+150 W ℃/W ℃ TJ, Tstg Device Marking WT6401=6401 http :www.weitron.com.tw WEITRON 1/6 06-M ay-05 WT6401 Electrical Characteristic s (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit.
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