WT6920AM

WT6920AM Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free D1 1 3 8 DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 40 VOLTAGE S1 G1 D1 7 2 D2 6 S2 Features: *Super high dense cell design for low RDS(ON) RDS(ON)<35mΩ@VGS = 10V RDS(ON)<62mΩ@VGS = 4.5V *Simple Drive Requirement *Dual N MOSFET Package *SO-8 Package D2 Maximum Ratings (TA=25 C Unless Otherwise Specified) www.DataSheet4U.com G2 4 5 1 SO-8 Rating Symbol VDS VGS (TA =70 C) Value 40 Unite V V A A A W C/W C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) (TA =25 C) + 20 5 4.2 20 1.7 2 1.44 62.5 -55 to 150 ID IDM IS PD R θ JA TJ, Tstg Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) (TA =25 C) (TA =70 C) Maximax Junction-to-Ambient (1) Operating Junction and Storage Temperature Range Device Marking WT6920AM=STM6920A http://www.weitron.com.tw WEITRON 1/6 02-Aug-05 WT6920AM Electrical Characteristics Static (2) Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ 1.8 - Max 3 +100 1 35 62 Unit V V nA uA Drain-Source Breakdown Voltage VGS=0V, ID=250µA Gate-Source Threshold Voltage VDS=VGS, ID=250µA Gate-Source Leakage Current +20V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=32V, VGS=0V Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=5A On-State Drain Current VDS=5V, VGS=10V Forward Transconductance VDS=5V, ID=6A 40 1 - 15 rDS (on) 24 45 mΩ ID(on) gfs 10 - A S ...