CPV364M4KPBF

Bulletin I-27256 09/06 CPV364M4KPbF IGBT SIP MODULE Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10μs @ 125°C, VGE = 15V Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) Totally Lead-Free and RoHs Compliant Short Circuit Rated UltraFast IGBT 1 Features 3 Q1 D1 9 4 D2 12 Q3 D3 15 10 D4 18 Q5 D5 16 6 Q2 Q4 Q6 D6 7 13 19 Product Summary Output Current in a Typical 20 kHz Motor Drive 11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Isolated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. www.DataSheet4U.com Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collecto...