Metal Oxide Varistors SMD multilayer varistor
Metal Oxide Varistors SMD multilayer varistor with Ni-barrier termination
CT0402S14AHSG B72590T8140S160
Designation sy...
Description
Metal Oxide Varistors SMD multilayer varistor with Ni-barrier termination
CT0402S14AHSG B72590T8140S160
Designation system
CT 0402 S…A 14 HS G = Chip with three-layer- termination (Ag/Ni/Sn) = Dimensions of the device 04 x 02 (length x width in 1/100 inch) = Special tolerance of the varistor voltage = Maximum operating voltage = Designed for protection of high speed data lines = Taped version (cardboard tape, 7” reel, 10000 pieces/reel)
Figure
l
b
www.DataSheet4U.com
l = 1.0 ± 0.15 b = 0.5 ± 0.10 s = 0.5 ± 0.10 k = 0.2 ± 0.10
s
k
(all dimensions in mm)
As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved.
ISSUE DATE
28.01.2005
ISSUE
e
PUBLISHER
KB VS PE
PAGE
1/7
Metal Oxide Varistors SMD multilayer varistor with Ni-barrier termination
CT0402S14AHSG B72590T8140S160
V-I-characteristic
VAR9733A
200 V v 100 80 60 40
20
10 8 6 4
2
1 10 -5
10 -4
10 -3
10 -2
10 -1
10 0 i
A 10 1
Max. current, energy and average power dissipation depending on ambient temperature
% 100 90 80 70 60 50 40 30 20 10 0 -55
70
80
90 100 110 120 Ambient temperature
130
140
150 °C
ISSUE DATE
28.01.2005
ISSUE
e
PUBLISHER
KB VS PE
PAGE
2/7
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