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CT0402S14AHSG

EPCOS

Metal Oxide Varistors SMD multilayer varistor

Metal Oxide Varistors SMD multilayer varistor with Ni-barrier termination CT0402S14AHSG B72590T8140S160 Designation sy...


EPCOS

CT0402S14AHSG

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Metal Oxide Varistors SMD multilayer varistor with Ni-barrier termination CT0402S14AHSG B72590T8140S160 Designation system CT 0402 S…A 14 HS G = Chip with three-layer- termination (Ag/Ni/Sn) = Dimensions of the device 04 x 02 (length x width in 1/100 inch) = Special tolerance of the varistor voltage = Maximum operating voltage = Designed for protection of high speed data lines = Taped version (cardboard tape, 7” reel, 10000 pieces/reel) Figure l b www.DataSheet4U.com l = 1.0 ± 0.15 b = 0.5 ± 0.10 s = 0.5 ± 0.10 k = 0.2 ± 0.10 s k (all dimensions in mm) As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. ISSUE DATE 28.01.2005 ISSUE e PUBLISHER KB VS PE PAGE 1/7 Metal Oxide Varistors SMD multilayer varistor with Ni-barrier termination CT0402S14AHSG B72590T8140S160 V-I-characteristic VAR9733A 200 V v 100 80 60 40 20 10 8 6 4 2 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 i A 10 1 Max. current, energy and average power dissipation depending on ambient temperature % 100 90 80 70 60 50 40 30 20 10 0 -55 70 80 90 100 110 120 Ambient temperature 130 140 150 °C ISSUE DATE 28.01.2005 ISSUE e PUBLISHER KB VS PE PAGE 2/7 Metal Oxide Varistors ...




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