D2024UK SILICON FET Datasheet

D2024UK Datasheet, PDF, Equivalent


Part Number

D2024UK

Description

METAL GATE RF SILICON FET

Manufacture

Seme LAB

Total Page 2 Pages
Datasheet
Download D2024UK Datasheet


D2024UK
TetraFET
D2024UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
A
8
D7
6
5
1
2
CB
3
4
N
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
SINGLE ENDED
H
K
L
J
PIN 1 SOURCE
www.DataSheet4U.com
PIN 2 DRAIN
PIN 3 DRAIN
PIN 4 SOURCE
M
E
FG
SO8 PACKAGE
PIN 5 SOURCE
PIN 6 GATE
PIN 7 GATE
PIN 8 SOURCE
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.76
0.51
1.02
45°
0°
7°
0.20
2.18
4.57
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
29W
BVDSS
Drain – Source Breakdown Voltage
65V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
4A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim.6/00

D2024UK
D2024UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
DrainSource
BVDSS Breakdown Voltage
VGS = 0
ID = 10mA
65
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 10W
VDS = 28V
f = 1GHz
VDS = 0
VDS = VGS
ID = 0.8A
IDQ = 0.4A
1
0.72
10
40
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0V
VDS = 28V
VDS = 28V
VGS = 5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
Typ.
Max. Unit
V
1 mA
4 µA
7V
S
dB
%
48 pF
24 pF
2 pF
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Max. 6°C / W
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim.6/00


Features TetraFET D2024UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. A N 8 D 1 2 C B P 7 6 5 3 4 GOLD ME TALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED F EATURES H K L J E F G M • SIMPLI FIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Cr ss • SIMPLE BIAS CIRCUITS • LOW NOI SE • HIGH GAIN SO8 PACKAGE www.DataS heet4U.com PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE Dim. A B C D E F G H J K L M N P mm 4.0 6 5.08 1.27 0.51 3.56 4.06 1.65 0.76 0. 51 1.02 45° 0° 7° 0.20 2.18 4.57 Tol . ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ± 0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08 PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE P IN 8 – SOURCE Inches 0.160 0.200 0.05 0 0.020 0.140 0.160 0.065 0.030 0.020 0 .040 45° 0° 7° 0.008 0.086 0.180 Tol . ±0.003 ±0.003 ±0.003 ±0.003 ±0.0 03 ±0.003 ±0.003 +0.010 -0.000 Min. M ax. Max. Min. Max. ±0.003 Max. ±0.003 APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM.
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