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IS42S16100C1 Dataheets PDF



Part Number IS42S16100C1
Manufacturers ISSI
Logo ISSI
Description 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Datasheet IS42S16100C1 DatasheetIS42S16100C1 Datasheet (PDF)

IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM SEPTEMBER 2009 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 4096 refres.

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IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM SEPTEMBER 2009 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 4096 refresh cycles every 64 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Byte controlled by LDQM and UDQM • Industrial temperature up to 143 MHz • Packages 400-mil 50-pin TSOP-II, 60-ball fBGA • Lead-free package option DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524.


IS42S16100A1 IS42S16100C1 IS61LV25616


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