MA4PBL027

HMICTM Silicon Beam-Lead PIN Diodes Features Beam-Lead Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection Low Parasitic Capacitance and Inductance Ultra Low Capacitance < 40 fF Excellent RC Product < 0.10 pS High Switching Cutoff Frequency > 110 GHz 110 Nanosecond Minority Carrier Lifetime Driven by Standard +5V TTL PIN Diode Driver MA4PBL027 V1 Case Style ODS-1302 Cathode A F D B Description and Applications This device is a Silicon-Glass Beam-Lead PIN diode fabricated with M/A-COM’s patented HMICTM process. This device features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for www.DataSheet4U.com scratch and impact protection. These protective coatings prevent damage to the junction and the air-bridges during handling and assembly. The diodes themselves exhibit low series resistance, low capacitance, and extremely fast switching speed. The ultra low capacitance of this device allows use through W-band (110 GHz) applications. The low RC product and low profile of the PIN diodes makes it ideal for use in microwave and millimeter wave switch designs, where lower insertion loss and higher isolation are required. The + 10 mA ( low loss s...