MA4PBL027 PIN Diodes Datasheet

MA4PBL027 Datasheet, PDF, Equivalent


Part Number

MA4PBL027

Description

HMICTM Silicon Beam-Lead PIN Diodes

Manufacture

Tyco Electronics

Total Page 5 Pages
Datasheet
Download MA4PBL027 Datasheet


MA4PBL027
HMICTM Silicon Beam-Lead PIN Diodes
Features
Beam-Lead Device
No Wirebonds Required
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch and Impact Protection
Low Parasitic Capacitance and Inductance
Ultra Low Capacitance < 40 fF
Excellent RC Product < 0.10 pS
High Switching Cutoff Frequency > 110 GHz
110 Nanosecond Minority Carrier Lifetime
Driven by Standard +5V TTL PIN Diode Driver
Description and Applications
This device is a Silicon-Glass Beam-Lead PIN diode
fabricated with M/A-COM’s patented HMICTM process. This
device features one silicon pedestal embedded in a
low loss, low dispersion glass which supports the
beam-leads. The diode is formed on the top of the
pedestal, and airbridges connect the diode to the
beam-leads. The topside is fully encapsulated with
silicon nitride and has an additional polymer layer for
scratchwww.DataSheet4U.com and impact protection. These protective
coatings prevent damage to the junction and the
air-bridges during handling and assembly.
The diodes themselves exhibit low series resistance,
low capacitance, and extremely fast switching
speed.
The ultra low capacitance of this device allows use
through W-band (110 GHz) applications. The low
RC product and low profile of the PIN diodes makes
it ideal for use in microwave and millimeter wave
switch designs, where lower insertion loss and
higher isolation are required. The + 10 mA ( low loss
state ) and the 0v ( isolation state ) bias of the
diodes allows the use a simple + 5V TTL gate driver.
These diodes are used as switching arrays on radar
systems, high-speed ECM circuits, optical switching
networks, instrumentation, and other wideband
multi-throw switch assemblies.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Case Style ODS-1302
Cathode
MA4PBL027
V1
A
F DB
side
Dimension
A
B
C
D
E
F
E
top
Mils
9.3 +/- 2.0
15.3 +/- 2.0
9.3 +/- 2.0
12.6 +/- 2.0
5.5 +/- 2.0
5.0 +/- 1.0
C
mm
0.24 +/- 0.05
0.39 +/- 0.05
0.24 +/- 0.05
0.32 +/- 0.05
0.14 +/- 0.05
0.13 +/- 0.03
Absolute Maximum Ratings @ TA = +25 °C
(unless otherwise specified)1
Parameter
Maximum Rating
Forward Current
100 mA
Reverse Voltage
90 V
Operating Temperature
-55 °C to +125 °C
Storage Temperature
-55 °C to +150 °C
JunctionTemperature
+175 °C
RF C.W. Incident Power
30 dBm C.W.
RF & DC Dissipated Power
150 mW
Mounting Temperature
+235°C for 10 sec.
1. Operation of this device above any one of these parameters
may cause permanent damage.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.

MA4PBL027
HMICTM Silicon Beam-Lead PIN Diodes
MA4PBL027
V1
Electrical Specifications at +25 °C
Symbol
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
RS
RS
RS
RS
Conditions
0 V, 1 MHz2
-3 V, 1 MHz2
-10 V, 1 MHz2
-40 V, 1 MHz2
0 V, 100 MHz2,4
-3 V, 100 MHz2,4
-10V, 100 MHz2,4
-40V, 100 MHz2,4
0 V, 1 GHz2,4
-3 V, 1 GHz2,4
-10 V, 1 GHz2,4
-40 V, 1 GHz2,4
10 mA, 100 MHz3,4
20 mA, 100 MHz3,4
10 mA, 1 GHz3,4
20 mA, 1 GHz3,4
VF 20 mA
VR -10 µA
IR -40 V
IR -90 V
TL +10 mA / -6 mA
Units
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
V
V
nA
uA
ns
Typ.
0.048
0.039
0.033
0.030
0.043
0.033
0.031
0.027
0.039
0.032
0.029
0.026
3.8
3.0
3.5
2.8
0.917
110
1.0
-
110
Max.
0.040
0.040
1.1
10.0
NOTES:
2. Total capacitance, CT, is equivalent to the sum of Junction Capacitance ,Cj, and Parasitic Capacitance, Cpar.
3. Series resistance RS is equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance)
4. Rs and CT are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-186 package with conductive silver epoxy.
Die Handling
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum pickups is strongly recommended for
individual components. Bulk handling should insure
that abrasion and mechanical shock are minimized.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Die Bonding
These devices were designed to be inserted onto
hard or soft substrates. Recommended methods of
attachment include thermocompression bonding, par-
allel-gap welding, and electrically conductive silver epoxy.
See Application Note M541, “Bonding and
Handling Procedures for Chip Diode Devices” for
More Detailed Assembly Instructions.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.


Features HMICTM Silicon Beam-Lead PIN Diodes Feat ures • • • • • • • • • • Beam-Lead Device No Wirebonds Required Rugged Silicon-Glass Construc tion Silicon Nitride Passivation Polyme r Scratch and Impact Protection Low Par asitic Capacitance and Inductance Ultra Low Capacitance < 40 fF Excellent RC P roduct < 0.10 pS High Switching Cutoff Frequency > 110 GHz 110 Nanosecond Mino rity Carrier Lifetime Driven by Standar d +5V TTL PIN Diode Driver MA4PBL027 V 1 Case Style ODS-1302 Cathode A F D B Description and Applications This d evice is a Silicon-Glass Beam-Lead PIN diode fabricated with M/A-COM’s paten ted HMICTM process. This device feature s one silicon pedestal embedded in a lo w loss, low dispersion glass which supp orts the beam-leads. The diode is forme d on the top of the pedestal, and airbr idges connect the diode to the beam-lea ds. The topside is fully encapsulated w ith silicon nitride and has an addition al polymer layer for www.DataSheet4U.com scratch and impact protection. These protectiv.
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