Effect Transistor. MRF1517NT1 Datasheet


MRF1517NT1 Transistor. Datasheet pdf. Equivalent


MRF1517NT1


RF Power Field Effect Transistor
Freescale Semiconductor Technical Data

Document Number: MRF1517N Rev. 5, 9/2006

RF Power Field Effect Transistor

N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common source amplifier applications in 7.5 volt portable FM equipment. D • Specified Performance @ 520 MHz, 7.5 Volts Output Power — 8 Watts Power Gain — 11 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive Features • Characterized with Series Equivalent Large - Signal G Impedance Parameters • Excellent Thermal Stability • Broadband UHF/VHF Demonstration Amplifier S Information Available Upon Request • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.

MRF1517NT1

520 MHz, 8 W, 7.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET

CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC

Table 1. Maximum Ratings
Rating
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Symbol VDSS VGS ID

Value - 0.5, +25 ± 20 4 62.5 0.50 - 65 to +150 150

Unit Vdc Vdc Adc W W/°C °C °C

Drain - Source Voltage Gate - Source Voltage

(1)

Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature
(2)

PD ...



MRF1517NT1
Freescale Semiconductor
Technical Data
Document Number: MRF1517N
Rev. 5, 9/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large- signal, common source amplifier applications in 7.5 volt
portable FM equipment.
Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
D
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
Features
Characterized with Series Equivalent Large - Signal
Impedance Parameters
G
Excellent Thermal Stability
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
S
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MRF1517NT1
520 MHz, 8 W, 7.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
www.DataSheet4U.com
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage (1)
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C (2)
Derate above 25°C
VDSS
VGS
ID
PD
- 0.5, +25
± 20
4
62.5
0.50
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +150
TJ 150
Characteristic
Symbol
Value (3)
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
RθJC
2
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1 260
1. Not designed for 12.5 volt applications.
2.
3.
CMaTlTcuFlactaeldcublaatsoerdaovnailtahbelefoarmt hutltap:P//Dww=wT.RfJreθ–eJTCscCale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1517NT1
1

MRF1517NT1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0)
IDSS — —
1 μAdc
Gate - Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
On Characteristics
Gate Threshold Voltage
(VDS = 7.5 Vdc, ID = 120 μAdc)
IGSS
VGS(th)
1
— 1 μAdc
1.7 2.1 Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.5
— Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
gfs — 0.9 — S
Ciss — 66 — pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Coss — 38 — pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Crss
6
— pF
Functional Tests (In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
Gps — 14 — dB
Drain Efficiency
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
η — 70 — %
MRF1517NT1
2
RF Device Data
Freescale Semiconductor




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