MRF6S27085HSR3 Lateral MOSFETs Datasheet

MRF6S27085HSR3 Datasheet, PDF, Equivalent


Part Number

MRF6S27085HSR3

Description

N-Channel Enhancement-Mode Lateral MOSFETs

Manufacture

Freescale Semiconductor

Total Page 12 Pages
Datasheet
Download MRF6S27085HSR3 Datasheet


MRF6S27085HSR3
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N- CDMA base station applications with frequencies from 2600
to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
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(Pilot,
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 23.5%
ACPR @ 885 kHz Offset — - 48 dBc @ 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 85 Watts CW
Output Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40µ″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S27085H
Rev. 1, 1/2005
MRF6S27085HR3
MRF6S27085HSR3
2700 MHz, 20 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S27085HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S27085HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
350
2
Storage Temperature Range
Operating Junction Temperature
CW Operation
Tstg - 65 to +150
TJ 200
CW 85
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 85 W CW
Case Temperature 76°C, 20 W CW
RθJC
0.50
0.56
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
1

MRF6S27085HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10 µAdc
IDSS
1 µAdc
IGSS
1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 900 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
1
2
3 Vdc
VGS(Q)
2
2.8
4 Vdc
VDS(on)
0.21
0.3
Vdc
gfs — 5.3 — S
Crss — 2.8 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 20 W Avg. N - CDMA,
f = 2630 MHz and 2660 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ ±885 kHz Offset. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps 14 15.5 17 dB
Drain Efficiency
ηD 22 23.5 — %
Adjacent Channel Power Ratio
ACPR
- 48 - 45 dBc
Input Return Loss
IRL — - 13 - 9 dB
1. Part is internally matched both on input and output.
MRF6S27085HR3 MRF6S27085HSR3
2
RF Device Data
Freescale Semiconductor


Features Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/ 2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Latera l MOSFETs Designed for N- CDMA base sta tion applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, C DMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 20 Watts Avg., Full Frequenc y Band, IS - 95 CDMA (Pilot, Sync, Pagi ng, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9. 8 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 23.5% ACPR @ 885 kHz Offset — - 48 dB c @ 30 kHz Bandwidth • Capable of Han dling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 85 Watts CW Output Power • Characterize d with Series Equivalent Large - Signal Impedance Parameters • Internally Matched, Controlled Q, for Ease of Use •.
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