NS2029M3T5G

NS2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. ăReduces Board Space ăHigh hFE, 210ā-ā460 (Typical) ăLow VCE(sat), < 0.5 V ăESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V ăAvailable in 4 mm, 8000 Unit Tape & Reel ăThis is a Pb-Free Device http://onsemi.com PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage www.DataSheet4U.com Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value -60 -50 -6.0 -100 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER Collector Current - Continuous THERMAL CHARACTERISTICS Rating Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 265 150 -ā55 ~ +ā150 Unit mW °C °C 1 2 3 MARKING DIAGRAM SOT-723 CASE 631AA 9F M Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 9F = Specific Device Code M = Date Code ORDERING INFORMATI...