Barrier Diode. CDBU0145 Datasheet

CDBU0145 Diode. Datasheet pdf. Equivalent

Part CDBU0145
Description SMD Schottky Barrier Diode
Feature SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBU0145 Io = 100 mA V R = 45 Volt s Feat.
Manufacture Comchip Technology
Datasheet
Download CDBU0145 Datasheet



CDBU0145
SMD Schottky Barrier Diode
CDBU0145 (Lead-free Device)
Io = 100 mA
VR = 45 Volt s
Features
COMCHIP
SMD Diodes Specialist
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current (IR=0.1uA typ.
@VR=10V).
Majority carrier conduction.
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
Mechanical data
Case: 0603 (1608) Standard package ,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
www.DataSheet4U.com
Mounting position: Any.
Weight: 0.003 gram (approximately).
0.014(0.35) Typ.
0.033(0.85)
0.027(0.70)
0.012 (0.30) Typ.
0.018(0.45) Typ.
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
50 V
VR 45 V
Io 100 mA
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
1000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
Tj
-40
-40
150
+125
+125
mW
C
C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 100 mADC
Reverse current
VR = 10 V
Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage
Symbol Min Typ Max Unit
VF 0.55 V
IR 1 uA
CT 9 pF
QW-A1019
REV:A
Page 1



CDBU0145
SMD Schottky Barrier Diode
COMCHIP
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBU0145)
Fig. 1 - Forward characteristics
1000
100
10
1
0.1
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage (V)
0.7
Fig. 2 - Reverse characteristics
10m
1m 125 C
100u 75 C
10u
25 C
1u
100n
10n
1n
0
-25 C
10 20 30
Reverse voltage (V)
40
Fig. 3 - Capacitance between
terminals characteristics
100
f = 1 MHz
Ta = 25 C
10
1
0
5 10 15 20 25 30 35
Reverse voltage (V)
Fig. 4 - Current derating curve
Mounting on glass epoxy PCBs
100
80
60
40
20
0
0
25 50 75 100 125 150
Ambient temperature ( C )
QW-A1019
REV:A
Page 2







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)