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CDBU0320 Dataheets PDF



Part Number CDBU0320
Manufacturers Comchip Technology
Logo Comchip Technology
Description (CDBU0320 - CDBU0340) SMD Schottky Barrier Diode
Datasheet CDBU0320 DatasheetCDBU0320 Datasheet (PDF)

SMD Schottky Barrier Diode SMD Diodes Specialist CDBU0320/0330/0340 (Lead-free Device) I O = 350 mA V R = 20 to 40 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.039(1.00) 0.031(0.80) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting positi.

  CDBU0320   CDBU0320



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SMD Schottky Barrier Diode SMD Diodes Specialist CDBU0320/0330/0340 (Lead-free Device) I O = 350 mA V R = 20 to 40 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.039(1.00) 0.031(0.80) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.). 0.028(0.70) Typ. 0.012 (0.30) Typ. 0.014(0.35) Typ. 0.033(0.85) 0.027(0.70) Dimensions in inches and (millimeter) www.DataSheet4U.com Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Repetitive Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Forward current, surge peak 8.3 ms single half sine-wave Power dissipation Thermal resistance junction to ambient air Storage temperature Junction temperature Symbol V RRM VR V R(RMS) IO I FSM PD R JA CDBU0320 20 14 CDBU0330 30 21 350 1.5 150 667 -65 TO +125 +125 CDBU0340 Unit 40 28 V V mA A mW O C/W O T STG Tj O C C O Electrical Characteristics (at T A =25 C unless otherwise noted) Parameter Reverse current CDBU0320 CDBU0330 CDBU0340 V R = 10V V R = 20V V R = 30V I F = 20mA I F = 200mA f = 1 MHz, and 0 VDC reverse voltage I F =I R =10mA,Irr=0.1xIR,RL=100 ohm Conditions Symbol Min Typ Max Unit IR 5 5 5 0.37 0.60 50 6.4 uA Forward voltage VF CT T rr V pF nS Capacitance between terminals Reverse recovery time REV:B QW-A1035 Page 1 SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBU0320/0330/0340) Fig. 1 - Forward characteristics 1000 1m 125 C O Fig. 2 - Reverse characteristics Reverse current ( A ) Forward current (mA ) 100 100u 10 10u 75 C O 1 1u 25 C O C C O 0.1 C 125 75 25 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 -25 C O 100n O O 10n 0 10 20 30 40 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics Capacitance between terminals ( P F) 50 120 Fig.4 - Current derating curve Average forward current(%) f=1MHz O T A =25 C 40 Mounting on glass epoxy PCBs 100 80 30 60 20 40 10 20 0 0 10 20 30 40 0 0 25 50 75 100 O 125 150 Reverse voltage (V) Ambient temperature ( C) REV:B QW-A1035 Page 2 .


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