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CDBUR0130

Comchip Technology

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR0130 (RoHs Device) Io = 100 mA V R = 30 Volts Features Designed f...


Comchip Technology

CDBUR0130

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Description
SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR0130 (RoHs Device) Io = 100 mA V R = 30 Volts Features Designed for mounting on small surface. Extremely thin package. Low stored charge. Majority carrier conduction. 0.039(1.00) 0.031(0.80) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.). 0.028(0.70) Typ. 0.018(0.45) Typ. 0.033(0.85) 0.027(0.70) Dimensions in inches and (millimeter) www.DataSheet4U.com Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Sunction temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR IO 35 30 100 1000 150 -40 +125 +125 V V mA mA mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current Capacitance between terimnals V R = 30V Conditions I F = 100 mA DC Symbol Min Typ Max Unit VF IR CT 9 0.44 30 V uA pF F = 1 MHZ and 10 VDC reverse voltage REV:A QW-A1056 Page 1 SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBUR0130) Fig. 1 - Forward characteristics 1000 10m 1m Fig. 2 - Reverse charact...




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