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CDBUR0145

Comchip Technology

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR0145 (RoHs Device) Io = 100 mA V R = 45 Volts Features Designed f...


Comchip Technology

CDBUR0145

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Description
SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR0145 (RoHs Device) Io = 100 mA V R = 45 Volts Features Designed for mounting on small surface. Extremely thin/leadless package. Low leakage current. (I R =0.1uA typ.@V R =10V) Majority carrier conduction. 0.039(1.00) 0.031(0.80) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data Case: 0603(1608) standard package, molded plastic. 0.018(0.45) Typ. 0.033(0.85) 0.027(0.70) Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.). Dimensions in inches and (millimeter) www.DataSheet4U.com 0.028(0.70) Typ. Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Sunction temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR IO 50 45 100 1000 150 -40 +125 +125 V V mA mA mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current Capacitance between terimnals V R = 10V Conditions I F = 100 mA DC Symbol Min Typ Max Unit VF IR CT 9 0.55 1 V uA pF F = 1 MHZ and 10 VDC reverse voltage REV:A QW-A1062 Page 1 SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBUR0145) Fig. 1 - Forward characteristic...




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