N-Channel MOSFET. NTE2996 Datasheet


NTE2996 MOSFET. Datasheet pdf. Equivalent


NTE2996


N-Channel MOSFET
NTE2996 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package

Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated

D G

Absolute Maximum Ratings:

S

Drain

CCPuuorlnrsTTeteiCCnndtu==,(oIN++Duo21st50e(50VC25GC)(SN..=o.. ..t1e..0..1V..))..

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. 84A . 59A 330A

Total

PDowerearteDiAsbsiopvaetio2n55(CTC.

= ..

+255C), .......

.P.D.

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. . 200W 1.4W/5C

Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V

Single Pulsed Avalanche Energy (IAS = 50A, L = 260mH, Note 3), EAS . . . . . . . . . . . . . . . . . . 320mJ

Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....



NTE2996
NTE2996
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Type Package
Features:
D Ultra Low OnResistance
D Dynamic dv/dt Rating
D +1755C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
D
G
Absolute Maximum Ratings:
S
Drain
CCPuuorlnrsTTeteiCCnndtu==,(oIN++Duo21st50e(50VC25GC)(SN..=o.. ..t1e..0..1V..))..
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. 84A
. 59A
330A
Total
PDowerearteDiAsbsiopvaetio2n55(CTC.
=
..
+255C),
.......
.P.D.
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. . 200W
1.4W/5C
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Single Pulsed Avalanche Energy (IAS = 50A, L = 260mH, Note 3), EAS . . . . . . . . . . . . . . . . . . 320mJ
Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +3005C
Maximum Thermal Resistance:
JJuunnccttiioonn−−ttoo−−CAmasbeie, nRtt,hRJCthJ.A.
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0.755C/W
. 625C/W
Typical Thermal Resistance, CasetoSink (Flat, greased surface), RthCS . . . . . . . . . . . . 0.505C/W
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. This is a calculated value limited to TJ = +1755C.
Note 4. ISD 3 50A, di/dt 3 230A/ms, VDD 3 V(BR)DSS, TJ 3 +1755C.
Rev. 714

NTE2996
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
DV(BDRT)JDSS/
VGS = 0V, ID = 250mA
Reference to +255C, ID = 1mA
60 − − V
0.064 V/5C
Static DrainSource ON Resistance RDS(on) VGS = 10V, ID = 50A, Note 5
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250mA
Forward Transconductance
gfs VDS = 25V, ID = 50A, Note 5
DraintoSource Leakage Current
IDSS
VDS = 60V, VGS = 0
VDS = 48V, VGS = 0V, TC = +1505C
GateSource Leakage, Forward
IGSS
VGS = 20V
GateSource Leakage, Reverse
VGS = 20V
Total Gate Charge
Qg VGS = 10V, ID = 50A, VDS = 48V
GateSource Charge
Qgs
GateDrain (“Miller”) Charge
Qgd
TurnOn Delay Time
Rise Time
td(on)
tr
VVDGDS
=
=
3100VV,,
INDo=te550A,
RG
=
3.6W,
TurnOff Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
Internal Source Inductance
LD Between lead, 6mm (0.25”) from
LS package and center of die contact
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SourceDrain Diode Ratings and Characteristics
− − 12 mW
2.0 4.0 V
69
mhos
− − 25 mA
− − 250 mA
− − 100 nA
− − −100 nA
− − 130 nC
− − 28 nC
− − 44 nC
12 ns
78 ns
48 ns
53 ns
4.5 nH
7.5 nH
3210 pF
690 pF
140 pF
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
IS (Body Diode) Note 6
− − 84 A
ISM (Body Diode) Note 2
− − 330 A
VSD TJ = +255C, IS = 50A, VGS = 0V, Note 5
1.3 V
trr
Qrr
TNJot=e+5255C, IF = 50A, di/dt = 100A/ms,
73 110 ns
220 330 mC
ton
Intrinsic turnon time is neglegible
(turnon is dominated by LS + LD)
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Width 3 400ms, Duty Cycle 3 2%.
Note 6. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.




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