NTLJD3115P

NTLJD3115P Power MOSFET Features −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS(on) Solution in 2x2 mm Package 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level Low Profile (< 0.8 mm) for Easy Fit in Thin Environments Bidirectional Current Flow with Common Source Configuration This is a Pb−Free Device V(BR)DSS http://onsemi.com RDS(on) MAX 100 mW @ −4.5 V −20 V 135 mW @ −2.5 V 200 mW @ −1.8 V S1 S2 −4.1 A ID MAX (Note 1) Applications G1 G2 Optimized for Battery and Load Management Applications in Portable Equipment Li−Ion Battery Charging and Protection Circuits High Side Load Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) www.DataSheet4U.com D1 P−CHANNEL MOSFET D2 Value −20 ±8.0 −3.3 −2.4 −4.1 Unit V V A Pin 1 D1 D2 P−CHANNEL MOSFET Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25°C Steady State TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C Symbol VDSS VGS ID MARKING DIAGRAM 1 6 2 JDMG 5 G 3 4 WDFN6 CASE 506AN PD TA = 25°C 1.5 2.3 W JD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS ID PD IDM TJ, TSTG IS TL −2.3 −1.6 0...