NTMFS4833N

NTMFS4833N MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 191 A Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices Applications Refer to Application Note AND8195/D CPU Power Delivery DC−DC Converters Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Note 1) TA = 25°C ID TA = 85°C 28 A 20.5 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.7 W Continuous Drain TA = 25°C ID Current RqJA (Note 2) Steady TA = 85°C State Power Dissipation TA = 25°C PD RqJA (Note 2) 16 A 12 1.1 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID TC = 85°C 191 A 138 Power Dissipation RqJC (Note 1) TC = 25°C PD 113.6 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 288 A Operating Junction and Storage Temperature TJ, TSTG −55 to °C +150 Source Current (Body Diode) Drain to Source dV/dt IS dV/dt 104 A 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 35 Apk, L = 1.0 mH, RG = 25 W) EAS 612.5 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality sho...