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CDST193-G

Comchip Technology

SMD Switching Diode

SMD Switching Diode COMCHIP SMD Diodes Specialist CDST193-G RoHS Device Features -Low forward voltage: V F =0.9V (Typ....


Comchip Technology

CDST193-G

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Description
SMD Switching Diode COMCHIP SMD Diodes Specialist CDST193-G RoHS Device Features -Low forward voltage: V F =0.9V (Typ.) -Fast reverse recovery time: t rr =1.6nS (Typ.) 0.056(1.40) 0.047(1.20) SOT-23 0.119(3.00) 0.110(2.80) 3 Polarity: 1. ANODE 2. N.C. 3. CATHODE 0.044(1.10) 0.035(0.90) 1 0.083(2.10) 0.066(1.70) 2 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) Marking: F3 0.006(0.15) max 0.020(0.50) 0.013(0.35) 0.007(0.20) min Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25 C unless otherwise noted) Parameter Non-repetitive peak reverse voltage www.DataSheet4U.com O Symbol V RM VR I FM IO PD TJ T STG Value 85 80 300* 100* 150 125 -55 ~ +125 Unit V V mA mA mW O DC blocking voltage Forward continuous current Average rectified output current Power dissipation Junction temperature Storage temperature *Unit rating. Total rating=Unit rating × 1.5 C C O Electrical Characteristics (at Ta=25 C unless otherwise noted) Parameter Reverse breakdown voltage I R =100μA I F =1mA Forward voltage I F =10mA I F =100mA V R =30V Reverse current V O Conditions Symbol V (BR)R V F1 V F2 V F3 I R1 I R2 CT t rr Min 80 Min V 0.60 0.72 0.90 Max V Unit V V V V 1.2 0.1 0.5 V μA μA pF nS V R =80V V R =0V, f=1MHz I F =I R =10mA, Irr=0.1×I R Capacitance between terminals Reverse recovery time 0.90 1.60 3.0 4.0 REV:A QW-B0028 Page 1 SMD Switching Diode RATING AND CHARACTERISTIC CURVES (CDST193-G) Fig.1 Forward Voltage Characteristics 1 10μ COMCHIP SMD Dio...




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