N-CHANNEL MOSFET
STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK I2PAK -...
Description
STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET
Features
Type
VDSS (@Tjmax)
RDS(on) max
ID
STB21NM60N
)STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N
650 V 650 V 650 V 650 V 650 V
< 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω
17 A 17 A 17 A(1) 17 A 17 A
rod1. Limited by maximum temperature allowed
P■ 100% avalanche tested te■ Low input capacitance and gate charge le■ Low gate input resistance
bsoApplication - O■ Switching applications
t(s)Description ucThis series of devices implements the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
Obsoledemanding high efficiency converters.
3 2 1
TO-220
3 2 1
TO-220FP
3 1
D2PAK
123
I2PAK
3 2 1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
Package
Packaging
STB21NM60N STB21NM60N-1
B21NM60N B21NM60N
D2PAK I2PAK
Tape and reel Tube
STF21NM60N
F21NM60N
TO-220FP
Tube
STP21NM60N
P21NM60N
TO-220
Tube
STW21NM60N
W21NM60N
TO-247
Tube
February 2008
Rev 7
1/18
www.st.com
18
Contents
Contents
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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