STB21NM60N-1

STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allowed P■ 100% avalanche tested te■ Low input capacitance and gate charge le■ Low gate input resistance bsoApplication - O■ Switching applications t(s)Description ucThis series of devices implements the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most Obsoledemanding high efficiency converters. 3 2 1 TO-220 3 2 1 TO-220FP 3 1 D2PAK 123 I2PAK 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking Package Packaging STB21NM60N STB21NM60N-1 B21NM60N B21NM60N D2PAK I2PAK Tape and reel Tube STF21NM60N F21NM60N TO-220FP Tube STP21NM60N P21NM60N TO-220 Tube STW21NM60N W21NM60N TO-247 Tube February 2008 Rev 7 1/18 www.st.com 18 Contents Contents STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...