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ISSUED DATE :2003/11/27 REVISED DATE :2005/01/21B
G M B TA 4 2
Description Package Dimensions
NP N EP ITAXIAL PL ANAR T RANS ISTO R
The GMBTA42 is designed for high voltage transistor.
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10
Absolute Maximum Ratings at Ta = 25
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Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation
Symbol Tj Tstg VCBO VCEO VEBO IC PD
Ratings +150 -55~+150 300 300 6 500 350
Unit
V V V mA mW
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 hFE3 fT Cob
at Ta = 25
Min. 300 300 6 25 40 40 50 Typ. 3 MHz pF Max. 100 100 500 900 Unit V V V nA nA mV mV IC=100uA , IE=0 IC=1mA ,IB=0 IE=100uA ,IC=0 VCB=200V, IE=0 VEB=6V ,IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=20V, IC=10mA, f=100MHz VCB=20V, f=1MHz Test Conditions
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ISSUED DATE :2003/11/27 REVISED DATE :2005/01/21B
Characteristics Curve
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