MA4AGP907

AlGaAs Flip-Chip PIN Diode Features Low Series Resistance, 3 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed Can be Driven by Buffered TTL Silicon Nitride Passivation Polyamide Scratch Protection MA4AGP907 V1 Package Outline (Top View Shown Is With Diode Junction Up) Cathode Description and Applications M/A-COM's MA4AGP907 is an Aluminum Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps ) and 2 nS switching characteristics. The useable frequency range is 100 MHz to 40 GHz. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage www.DataSheet4U.com to the junction and the anode airbridge during handling. The 25 fF capacitance of the MA4AGP907 is useable for mmwave switch and switched phase shifter applications. This diode is designed for use in pulsed or CW applications, where single digit nS switching speed is required. For surface mount assembly, the low capacitance of the MA4AGP907 makes it ideal for use in microwave multithrow switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects VSWR. Absolute Maximum Ratings @ 25 °C1 Parameter Operating Temperature Storage Temperature JunctionTem...