Semiconductor
STD13003Q
NPN Silicon Power Transistor
Features
• High speed switching • VCEO(sus)=400V • Suitable for S...
Semiconductor
STD13003Q
NPN Silicon Power
Transistor
Features
High speed switching VCEO(sus)=400V Suitable for Switching
Regulator and Motor Control
Ordering Information
Type NO. STD13003Q Marking STD13003 Package Code TO-92
Outline Dimensions
unit : mm
4.40~4.80 4.40~4.80
www.DataSheet4U.com
0.50 Max. 13.50~14.50 1.27 Typ.
1.27 Typ.
1
3.40~3.60
2 3
0.45 Max.
PIN Connections 1. Emitter 2. Collector 3. Base
KSD-T0A012-000
1
STD13003Q
Absolute Maximum Ratings
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Collector power dissipation Junction temperature Storage temperature (Ta=25℃)
Symbol
VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Ratings
700 400 9 1.5 3 0.75 1.1 150 -55~150
Unit
V V V A A A W °C °C
Electrical Characteristics
Characteristic
Collector-emitter sustaining voltage Collector cut-off current Emitter cut-off current DC current gain
(Ta=25℃)
Symbol
VCE(sus) ICBO IEBO hFE*
Test Condition
IC=5mA, IB=0 VCB=700V, IE=0 VEB=9V, IC=0 IC=0.5A, VCE=2V IC=1A, VCE=2V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A
Min. Typ. Max.
400 8 5 4 13 10 10 40 0.5 1 3 1 1.2 0.5 4 0.7
Unit
V uA uA
Collector-emitter saturation voltage
VCE(sat)*
V
Base-emitter saturation voltage Transition frequency Output capacitance Turn on Time Storage Time Fall Time
VBE(sat)* fT Cob ton tstg tf
IC=0.5A, IB=0.1A IC=1A, IB=0.25A VCB=10V, IC=0.1A, f=1MHz VCB=10V, IE=0, f=0....