STFV4N150

STFV4N150 N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH™ Power MOSFET General features Type STFV4N150 ■ ■ ■ ■ ■ ■ VDSS 1500V RDS(on) <7Ω ID 4A Pw 40W Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching Fully plastic TO-220 package Creepage distance path is > 4mm 1 2 3 TO-220FH Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. The creepage path is what makes this package unique from TO-220FP. The creepage distance path between each lead and between the leads and the heatsink has been increased to >4.0mm, making this package met all stringent safety norms in high voltage applications. Internal schematic diagram www.DataSheet4U.com Applications ■ Switching application Order codes Part number STFV4N150 Marking FV4N150 Package TO-220FH Packaging Tube March 2007 Rev 4 1/13 www.st.com 13 Contents STFV4N150 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5...