HUR3020PT

HUR3020PT, HUR3030PT, HUR3040PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 400 VRRM V 200 300 400 HUR3020PT HUR3030PT HUR3040PT www.DataSheet4U.com Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=135oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=2.5A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 35 2 x 15 140 0.8 0.3 -55...+175 175 -55...+150 95 0.4...0.6 2 Unit A A mJ A o C W Nm g HUR3020PT, HUR3030PT, HUR3040PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=15A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 100 0.5 1.21 1.68 1.6 0.5 Unit uA mA V K/W ns IR VF RthJC RthCH trr IRM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C o 30 2.7 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switchi...