HUR60120

HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C(TAB) C A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 VRRM V 1000 1200 A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 HUR60100 HUR60120 www.DataSheet4U.com Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=90oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=14.5A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 60 500 23 1.5 -55...+175 175 -55...+150 230 0.8...1.2 6 Unit A A mJ A o C W Nm g HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=60A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 650 2.5 1.74 2.66 0.65 0.25 Unit uA mA V K/W ns IR VF RthJC RthCH trr IRM IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=130A; -diF/dt=100A/us; TVJ=100 C o 40 7 14.3 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery beha...