HVL147M

HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.3.00 Jan 20, 2006 Features Adopting the trench structure improves low capacitance.(C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Information Type No. HVL147M Laser Mark N Package Name TEFP Package Code PUSF0002ZA-A Pin Arrangement Cathode mark Mark www.DataSheet4U.com 1 N 2 1. Cathode 2. Anode Rev.3.00 Jan 20, 2006 page 1 of 4 HVL147M Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 100 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *1 Symbol IR VF C rf — Min — — — — — 100 Typ — — — 2.5 — — Max 100 1.00 0.31 — 1.5 — Unit nA V pF Ω V Test Condition VR = 30 V IF = 10 mA VR = 1 V, f = 1 MHz IF = 2 mA, f = 100 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. For TEFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature. Rev.3.00 Jan 20, 2006 page 2 of 4 HVL147M Main Characteristic 10-2 Ta = 75°C 10...