Pin Diode. HVL147M Datasheet

HVL147M Diode. Datasheet pdf. Equivalent

Part HVL147M
Description Silicon Epitaxial Trench Pin Diode
Feature HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.3.00 Jan 20, 20.
Manufacture Renesas Technology
Datasheet
Download HVL147M Datasheet




HVL147M
HVL147M
Silicon Epitaxial Trench Pin Diode for Antenna Switching
REJ03G0394-0300
Rev.3.00
Jan 20, 2006
Features
Adopting the trench structure improves low capacitance.(C = 0.31 pF max)
Low forward resistance. (rf = 1.5 max)
Low operation current.
Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design.
Ordering Information
Type No.
HVL147M
Laser Mark
N
Package Name
TEFP
Package Code
PUSF0002ZA-A
Pin Arrangement
www.DataSheet4U.com
Cathode mark
Mark
1 2
1. Cathode
2. Anode
Rev.3.00 Jan 20, 2006 page 1 of 4



HVL147M
HVL147M
Absolute Maximum Ratings
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
VR
IF
Pd
Tj
Tstg
Symbol
Value
30
100
100
125
55 to +125
(Ta = 25°C)
Unit
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Condition
Reverse current
Forward voltage
Capacitance
Forward resistance
ESD-Capability *1
IR
VF
C
rf
— — 100 nA VR = 30 V
— — 1.00 V IF = 10 mA
0.31
pF VR = 1 V, f = 1 MHz
— 2.5 — IF = 2 mA, f = 100 MHz
— — 1.5
IF = 10 mA, f = 100 MHz
100 — — V C = 200 pF, R = 0 , Both forward and
reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V
2. For TEFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip
part is considered as unquestioned. Please kindly consider soldering nature.
Rev.3.00 Jan 20, 2006 page 2 of 4







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