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HVL147M Datasheet, Equivalent, Pin Diode.Silicon Epitaxial Trench Pin Diode Silicon Epitaxial Trench Pin Diode |
　
　
　
| Part | HVL147M |
|---|---|
| Description | Silicon Epitaxial Trench Pin Diode |
| Feature | HVL147M
Silicon Epitaxial Trench Pin Dio de for Antenna Switching
REJ03G0394-030 0 Rev. 3. 00 Jan 20, 2006 Features • â €¢ • • Adopting the trench structur e improves low capacitance. (C = 0. 31 pF max) Low forward resistance. (rf = 1. 5 Ω max) Low operation current. Thin E xtremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Information Type No. HVL147M Laser Mark N Package Name TEFP Package Code PUSF0002ZA-A Pin Arrangement Cath ode mark Mark www. DataSheet4U. com 1 â €¢ N 2 1. Cathode 2. Anode Rev. 3. 00 Jan 20, 2006 page 1 of 4 HVL147M Abso lute Maximum Ratings (Ta = . |
| Manufacture | Renesas Technology |
| Datasheet |
| Part | HVL147M |
|---|---|
| Description | Silicon Epitaxial Trench Pin Diode |
| Feature | HVL147M
Silicon Epitaxial Trench Pin Dio de for Antenna Switching
REJ03G0394-030 0 Rev. 3. 00 Jan 20, 2006 Features • â €¢ • • Adopting the trench structur e improves low capacitance. (C = 0. 31 pF max) Low forward resistance. (rf = 1. 5 Ω max) Low operation current. Thin E xtremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Information Type No. HVL147M Laser Mark N Package Name TEFP Package Code PUSF0002ZA-A Pin Arrangement Cath ode mark Mark www. DataSheet4U. com 1 â €¢ N 2 1. Cathode 2. Anode Rev. 3. 00 Jan 20, 2006 page 1 of 4 HVL147M Abso lute Maximum Ratings (Ta = . |
| Manufacture | Renesas Technology |
| Datasheet |
　
　
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