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Ordering number:ENN5290A
NPN Triple Diffused Planar Silicon Tr...
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Ordering number:ENN5290A
NPN Triple Diffused Planar Silicon
Transistor
2SC5296
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode.
Package Dimensions
unit:mm 2039D
[2SC5296]
3.4 16.0 5.0 8.0 5.6 3.1
21.0
22.0
4.0
2.8 2.0 20.4 1.0
2.0
0.6
1
2
3 3.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
5.45
5.45
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Conditions
Ratings 1500 800 6 8 16 3.0 60 150 –55 to +150
2.0
Unit V V V A A W W
˚C ˚C
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=800V, IE=0 VCE=1500V, RBE=0 800 40 130 5 1.5 Conditions Ratings min typ max 10 1.0 Unit µA mA V mA V V
VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 VCE(sat) VBE(sat) IC=5A, IB=1.25A IC=5A, IB=1.25A
Continued on next page.
Any and all SANYO products described or contained herein do not have specifi...
View C5296 Datasheet
