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Silicon Transistor. C5296 Datasheet |
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Ordering number:ENN5290A
NPN Triple Diffused Planar Silicon Transistor
2SC5296
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed : tf=100ns typ.
· High breakdown voltage : VCBO=1500V.
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
· On-chip damper diode.
Package Dimensions
unit:mm
2039D
[2SC5296]
16.0
3.4
5.6
3.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO VCB=800V, IE=0
ICES VCE=1500V, RBE=0
VCEO(sus) IC=100mA, IB=0
IEBO VEB=4V, IC=0
VCE(sat) IC=5A, IB=1.25A
VBE(sat) IC=5A, IB=1.25A
2.8
2.0
1.0
123
5.45 5.45
2.0
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Ratings
1500
800
6
8
16
3.0
60
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
10 µA
1.0 mA
800 V
40 130 mA
5V
1.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1899TS (KT)/11696YK (KOTO) TA-0585 No.5290–1/4
Datasheet
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Continued from preceding page.
Parameter
DC Current Gain
Storage Time
Fall Time
Switching Time Test Circuit
2SC5296
Symbol
hFE1
hFE2
tstg
tf
Conditions
VCE=5V, IC=1A
VCE=5V, IC=5A
IC=4A, IB1=0.8A, IB2=–1.6A
IC=4A, IB1=0.8A, IB2=–1.6A
Ratings
min typ
15
4
0.1
max
25
7
3.0
0.2
Unit
µs
µs
No.5290–2/4
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