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C5296 Datasheet, Equivalent, Silicon Transistor.NPN Triple Diffused Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor |
| Part | C5296 |
|---|---|
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Feature | w
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. D a t a S h e e t . c o . k r Ordering number:ENN529 0A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definitio n CRT Display Horizontal Deflection Out put Applications Features · High speed : tf=100ns typ. · High breakdown volt age : VCBO=1500V. · High reliability ( Adoption of HVP process). · Adoption o f MBIT process. · On-chip damper diode . Package Dimensions unit:mm 2039D [2S C5296] 3. 4 16. 0 5. 0 8. 0 5. 6 3. 1 21. 0 22. 0 4. 0 2. 8 2. 0 20. 4 1. 0 2. 0 0. 6 1 2 3 3. 5 Specifications Absolute Ma ximum Ratings at Ta = 25˚C Parameter C ollector-to-Base Vol . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | C5296 |
|---|---|
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Feature | w
w
w
. D a t a S h e e t . c o . k r Ordering number:ENN529 0A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definitio n CRT Display Horizontal Deflection Out put Applications Features · High speed : tf=100ns typ. · High breakdown volt age : VCBO=1500V. · High reliability ( Adoption of HVP process). · Adoption o f MBIT process. · On-chip damper diode . Package Dimensions unit:mm 2039D [2S C5296] 3. 4 16. 0 5. 0 8. 0 5. 6 3. 1 21. 0 22. 0 4. 0 2. 8 2. 0 20. 4 1. 0 2. 0 0. 6 1 2 3 3. 5 Specifications Absolute Ma ximum Ratings at Ta = 25˚C Parameter C ollector-to-Base Vol . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
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